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Last edited anonymously
April 30, 2008 | History
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Randall M. Feenstra

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3 works Add another?

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  • Cover of: Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications

    First published in 2008 — 4 editions
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  • Cover of: Atomic scale structure of interfaces: symposium held November 27-29, 1989, Boston Massachusetts, U.S.A.

    First published in 1990 — 3 editions
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  • Cover of: Gan and Related Alloys, 1999: Symposium Held November 28-December 3, 1999, Boston, Massachusetts, U.S.A (Materials Research Society Symposium Proceedings)

    First published in 2000 — 2 editions
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Subjects

Semiconductors, Congresses, Gallium nitride, Alloys, Atomic structure, Compound semiconductors, Crystal growth, Electroluminescence, Electroluminescent devices, Epitaxy, Gallium, Gallium alloys, Laser materials, Lasers, Materials, Optoelectronic devices, Silicon carbide, Surface chemistry

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ID Numbers

  • OLID: OL3040268A

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History

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April 30, 2008 Created by an anonymous user initial import