| Record ID | bcl_marc/bcl_open.03.mrc:194734972:1495 |
| Source | bcl_marc |
| Download Link | /show-records/bcl_marc/bcl_open.03.mrc:194734972:1495?format=raw |
LEADER: 01495nam 22003737a 4500
004 GPN9434
005 20000524102200.0
008 980806s1995 dcu b f000 0 eng d
035 $a(OCoLC)ocm39648002
035 9 $aGPN9434
037 $a19960038407$bNASA
040 $aGPO$cGPO$dDLC$dMvI
049 $aBXMX
074 $a0830-D (MF)
086 0 $aNAS 1.15:111682
100 1 $aOgbuji, Linus U. J. T.
245 10 $aHigh-temperature oxidation behavior of reaction-formed silicon carbide ceramics$h[microform] /$cLinus U.J.T. Ogbuji and M. Singh.
246 2 $aHigh temperature oxidation behavior of reaction formed silicon carbide ceramics
260 $a[Washington, D.C. :$bNational Aeronautics and Space Administration ;$aSpringfield, Va. :$bNational Technical Information Service, distributor,$c1995]
300 $a1 v.
490 1 $aNASA-TM ;$v111682
500 $aShipping list no.: 98-0791-M.
533 $aMicrofiche.$b[Washington, D.C. :$cNational Aeronautics and Space Administration,$d1997]$e1 microfiche.
650 7 $aOxidation.$2nasat
650 7 $aHigh temperature.$2nasat
650 7 $aSilicon carbides.$2nasat
650 7 $aCeramics.$2nasat
650 7 $aX ray diffraction.$2nasat
650 7 $aDensity (Mass/volume)$2nasat
700 1 $aSingh, M.$q(Mrityunjay)
710 1 $aUnited States.$bNational Aeronautics and Space Administration.
830 0 $aNASA technical memorandum$v111682..
852 30 $aMChB$bGOV$cFICHE$hNAS 1.15:111682$91
948 $aLTI 08/08/2000