| Record ID | harvard_bibliographic_metadata/ab.bib.00.20150123.full.mrc:323269511:1663 |
| Source | harvard_bibliographic_metadata |
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LEADER: 01663cam a2200361uu 4500
001 000419018-1
005 20020606090541.3
008 850521s1985 nyua b 01100 eng
010 $a 85012084
020 $a0306420740
035 0 $aocm12134762
040 $aDLC$cDLC
050 00 $aQC173.4.O73$bP488 1985
245 00 $aPhysics of disordered materials /$cedited by David Adler, Hellmut Fritzsche, and Stanford R. Ovshinsky.
260 0 $aNew York :$bPlenum Press,$cc1985.
300 $axviii, 850 p. :$bill. ;$c26 cm.
440 0 $aInstitute for Amorphous Studies series
500 $aFestschrift honoring Sir Nevill Mott on his eightieth birthday.
500 $aCompanion vols.: Tetrahedrally-bonded amorphous semiconductors / edited by David Adler and Hellmut Fritzche. Localization and metal-insulator transitions / edited by Hellmut Fritzche and David Adler.
504 $aIncludes bibliographies and indexes.
505 0 $apt. I. General aspects. -- pt. II. Elements of disorder. -- pt. III. Electronic structure and transport. -- pt. IV. The nature of defects. -- pt. V. Magnetism and disorder. -- pt. VI. Further challenges.
600 10 $aMott, N. F.$q(Nevill Francis),$cSir,$d1905-
650 0 $aGlass.
650 0 $aAmorphous substances.
650 0 $aOrder-disorder models.
650 0 $aAmorphous semiconductors.
700 1 $aAdler, David,$d1935-1987.
700 1 $aFritzsche, Hellmut.
700 1 $aOvshinsky, Stanford R.
700 1 $aMott, N. F.$q(Nevill Francis),$cSir,$d1905-
776 08 $iOnline version:$tPhysics of disordered materials.$dNew York : Plenum Press, ©1985$w(OCoLC)645782570
988 $a20020608
906 $0DLC