| Record ID | harvard_bibliographic_metadata/ab.bib.01.20150123.full.mrc:94550211:1000 |
| Source | harvard_bibliographic_metadata |
| Download Link | /show-records/harvard_bibliographic_metadata/ab.bib.01.20150123.full.mrc:94550211:1000?format=raw |
LEADER: 01000cam a2200265 4500
001 001100084-8
005 20020606090541.3
008 690526s1969 nyua b 00010 eng
010 $a 69016132
020 $a0471842907
020 $a471842907
035 0 $aocm00005513
040 $aDLC$cDLC$dOCL
050 0 $aQC612.S4$bS95
082 $a537.6/22
100 1 $aSze, S. M.,$d1936-
245 10 $aPhysics of semiconductor devices$c[by] S. M. Sze.
260 0 $aNew York,$bWiley-Interscience$c[1969]
300 $axiv, 812 p. :$billus. ;$c23 cm.
504 $aIncludes bibliographies.
505 0 $aIntroduction. -- Part I: Semiconductor physics. -- Part II: P-N junction devices. -- Part III: Interface and thin-film devices. -- Part IV: Optoelectronic devices. -- Part V: Bulk-effect devices.
650 0 $aSemiconductors.
776 08 $iOnline version:$aSze, S.M., 1936-$tPhysics of semiconductor devices.$dNew York, Wiley-Interscience [1969]$w(OCoLC)635768569
988 $a20020608
906 $0DLC