| Record ID | harvard_bibliographic_metadata/ab.bib.09.20150123.full.mrc:243710951:1744 |
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LEADER: 01744cam a22003134a 4500
001 009239880-4
005 20050601220307.0
008 020125s2002 nyua b 001 0 eng
010 $a 2002020034
020 $a0195116445
035 0 $aocm49326897
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aTK7874$b.A428 2002
082 00 $a621.39/732$221
100 1 $aAllen, P. E.$q(Phillip E.)
245 10 $aCMOS analog circuit design /$cPhillip E. Allen, Douglas R. Holberg.
250 $a2nd ed.
260 $aNew York :$bOxford University Press,$c2002.
300 $axvi, 784 p. :$bill. ;$c25 cm.
490 1 $aThe Oxford series in electrical and computer engineering
504 $aIncludes bibliographical references and index.
505 00 $gCh. 1.$tIntroduction and Background.$g1.1.$tAnalog Integrated-Circuit Design.$g1.2.$tNotation, Symbology, and Terminology.$g1.3.$tAnalog Signal Processing.$g1.4.$tExample of Analog VLSI Mixed-Signal Circuit Design --$gCh. 2.$tCMOS Technology.$g2.1.$tBasic MOS Semiconductor Fabrication Processes.$g2.2.$tThe pn Junction.$g2.3.$tThe MOS Transistor.$g2.4.$tPassive Components.$g2.5.$tOther Considerations of CMOS Technology.$g2.6.$tIntegrated Circuit Layout --$gCh. 3.$tCMOS Device Modeling.$g3.1.$tSimple MOS Large-Signal Model (Spice Level 1).$g3.2.$tOther MOS Large-Signal Model Parameters.$g3.3.$tSmall-Signal Model for the MOS Transistor.$g3.4.$tComputer Simulation Models.$g3.5.$tSubthreshold MOS Model.$g3.6.$tSPICE Simulation of MOS Circuits.
650 0 $aLinear integrated circuits.
650 0 $aMetal oxide semiconductors, Complementary.
700 1 $aHolberg, Douglas R.
830 0 $aOxford series in electrical and computer engineering.
988 $a20021123
906 $0DLC