Record ID | harvard_bibliographic_metadata/ab.bib.11.20150123.full.mrc:140909131:1155 |
Source | harvard_bibliographic_metadata |
Download Link | /show-records/harvard_bibliographic_metadata/ab.bib.11.20150123.full.mrc:140909131:1155?format=raw |
LEADER: 01155aam a22002891a 4504
001 011176779-2
005 20070928220541.0
008 930301s1991 ru a b 001 0 ruso
010 $a 93120824
020 $a5020296961
035 $a(Crl)b14379521
035 0 $aocm30920138
040 $aDLC$cDLC$dCRL$dMH
245 00 $aModelirovanie rosta i legirovanii͡a poluprovodnikovykh plenok metodom Monte-Karlo /$cL.N. Aleksandrov ... [et al.] ; otvetstvennyĭ redaktor S.I. Stenin.
260 $aNovosibirsk :$b"Nauka," Sibirskoe otd-nie,$c1991.
300 $a165 p. :$bill. ;$c22 cm.
500 $aAt head of title: Akademii͡a nauk SSSR. Sibirskoe otdelenie. Institut fiziki poluprovodnikov.
504 $aIncludes bibliographical references (p. 150-[162]) and indexes.
650 0 $aSemiconductors$xDiffusion$xMathematical models.
650 0 $aSemiconductor films$xMathematical models.
650 0 $aCrystal growth$xMathematical models.
650 0 $aMonte Carlo method.
700 1 $aAleksandrov, Leonid Naumovich.
700 1 $aStenin, S. I.
710 2 $aInstitut fiziki poluprovodnikov (Akademii͡a nauk SSSR)
988 $a20070928
906 $0DLC