| Record ID | harvard_bibliographic_metadata/ab.bib.11.20150123.full.mrc:142927942:1131 |
| Source | harvard_bibliographic_metadata |
| Download Link | /show-records/harvard_bibliographic_metadata/ab.bib.11.20150123.full.mrc:142927942:1131?format=raw |
LEADER: 01131nam a2200289Ia 4504
001 011178736-X
005 20070928220722.0
008 950710s1993 ru a b 000 0 rusod
020 $a5020301981
035 $a(Crl)b14423820
035 0 $aocm32786067
040 $aCRL$cCRL$dMH
100 1 $aGrit͡senko, V. A.$q(Vladimir Alekseevich)
245 10 $aStroenie i ėlektronnai͡a struktura amorfnykh diėlektrikov v kremnievykh MDP strukturakh /$cV.A. Grit͡senko ; otvetstvennyĭ redaktor V.G. Litovchenko.
260 $aNovosibirsk :$bVO "Nauka",$c1993.
300 $a277, [3] p. :$bill. ;$c22 cm.
500 $aAt head of title: Rossiĭskai͡a akademii͡a nauk. Sibirskoe otdelenie. Institut fiziki poluprovodnikov.
500 $a"Nauchnoe izdanie"--Colophon.
504 $aIncludes bibliographical references (p. 260-[278])
650 0 $aMetal insulator semiconductors.
650 0 $aAmorphous semiconductors.
650 0 $aDielectrics.
650 0 $aSilicon oxide$xElectric properties.
650 0 $aSilicon nitride$xElectric properties.
700 1 $aLitovchenko, Vladimir Grigorʹevich.
988 $a20070928
906 $0OCLC