MARC Record from harvard_bibliographic_metadata

LEADER: 02584cam a2200301 a 4500
001 012540768-8
005 20100823081918.0
008 091208s2010 enka b 001 0 eng
010 $a 2009051398
020 $a9780521449649 (hardback)
020 $a0521449642 (hardback)
035 0 $aocn460059670
040 $aDLC$cDLC$dYDX$dBTCTA$dBWK$dYDXCP$dBWX$dCDX
050 00 $aTK7895.M3$bT36 2010
082 00 $a621.39/73$222
100 1 $aTang, Denny D.
245 10 $aMagnetic memory :$bfundamentals and technology /$cDenny D. Tang, Yuan-Jen Lee.
260 $aCambridge, UK ;$aNew York :$bCambridge University Press,$cc2010.
300 $ax, 196 p. :$bill. ;$c26 cm.
520 $a"If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research"--Provided by publisher.
504 $aIncludes bibliographical references and index.
505 8 $aMachine generated contents note: 1. Basic magnetostatics; 2. Magnetic films; 3. Properties of patterned ferromagnetic film; 4. Magnetoresistance effects and memory devices; 5. Field-write mode MRAMs; 6. Spin torque transfer MRAM; 7. Applications of MTJ based technology; Appendices: A. Unit conversion table cgs vs. SI; B. Dimensions of magnetism; C. Physical constants; D. Normal (Gaussian) distribution and quantile plot; E. Weibull distribution; F. TDDB reliability test of thin film; G. Binomial distribution and Poisson distribution; H. Defect density; I. Fe, Co, Ni element chemistry parameters; J. Soft error, hard fail and design margin.
650 0 $aMagnetic memory (Computers)
700 1 $aLee, Yuan-Jen.
899 $a415_565300
988 $a20100802
049 $aCLSL
906 $0DLC