MARC Record from harvard_bibliographic_metadata

LEADER: 02346cam a2200397Ia 4500
001 013232067-3
005 20120608023231.0
006 m d f
008 110808s2011 coua obt f000 0 eng d
035 0 $aocn745906086
035 $a(FDLP)ocn745906086
040 $aSOE$cSOE$dGPO
074 $a0430-P-04 (online)
086 0 $aE 9.17:NREL/CP-5200-50725
245 00 $aDefect-band emission photoluminescence imaging on multi-crystalline Si solar cells$h[electronic resource] :$bpreprint /$cFei Yan ... [et al.].
260 $a[Golden, CO] :$bNational Renewable Energy Laboratory,$c[2011]
300 $a1 online resource (4 p.) :$bill. (some col.)
490 1 $aNREL/CP ;$v5200-50725
538 $aFull text available via Internet in .pdf format. Adobe Acrobat Reader required.
500 $aTitle from title screen (viewed August 8, 2011).
500 $a"July 2011."
500 $a"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."
504 $aIncludes bibliographical references (p. 4).
520 3 $aDefect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.
536 $bDE-AC36-08GO28308
650 0 $aPhotovoltaic cells$xResearch.
650 0 $aSilicon solar cells$xDesign and construction.
650 0 $aPhotoluminescence.
700 1 $aYan, Fei.
710 2 $aNational Renewable Energy Laboratory (U.S.)
710 2 $aColorado State University.
710 2 $aCalisolar.
711 2 $aIEEE Photovoltaic Specialists Conference$n(37th :$d2011 :$cSeattle, Wash.)
830 0 $aConference paper (National Renewable Energy Laboratory (U.S.)) ;$vNREL/CP-5200-50725.
988 $a20120608
906 $0OCLC