| Record ID | harvard_bibliographic_metadata/ab.bib.13.20150123.full.mrc:335343700:1573 |
| Source | harvard_bibliographic_metadata |
| Download Link | /show-records/harvard_bibliographic_metadata/ab.bib.13.20150123.full.mrc:335343700:1573?format=raw |
LEADER: 01573nam a2200397 a 4500
001 013296770-7
005 20120714021443.0
006 m d f
008 080609s2008 coua obt f000 0 eng c
035 0 $aocn231401330
035 $a(FDLP)ocn231401330
040 $aSOE$cSOE$dGPO
042 $apcc
074 $a0430-P-04 (online)
086 0 $aE 9.17:NREL/CP-590-42522
100 1 $aWei, Su-Huai.
245 10 $aDesign of shallow p-type dopants in ZnO$h[electronic resource] :$bpreprint /$cS.H. Wei, J. Li, and Y. Yan.
260 $aGolden, Colo. :$bNational Renewable Energy Laboratory,$c[2008]
300 $a1 online resource (4 p.) :$bill.
490 1 $aNREL/CP ;$v590-42522
513 $aConference paper;$b11-16 May 2008.
500 $aTitle from title screen (viewed June 9, 2008).
500 $a"May 2008."
500 $a"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."
504 $aIncludes bibliographical references (p. 4).
500 $a"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."
536 $gPVA72213.
650 0 $aSemiconductor doping.
650 0 $aDoped semiconductors.
650 0 $aCrystals$xDefects.
700 1 $aLi, Jian.
700 1 $aYan, Yixun.
710 2 $aNational Renewable Energy Laboratory (U.S.)
830 0 $aConference paper (National Renewable Energy Laboratory (U.S.)) ;$v590-42522.
988 $a20120714
906 $0OCLC