MARC Record from harvard_bibliographic_metadata

LEADER: 04094nam a22004335a 4500
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005 20130519084940.0
008 130321s2013 ne | s ||0| 0|eng d
020 $a9789048138326
020 $a9789048138326
020 $a9789048138319
024 7 $a10.1007/978-90-481-3832-6$2doi
035 $a(Springer)9789048138326
040 $aSpringer
050 4 $aTA1750-1750.22
072 7 $aTJFD$2bicssc
072 7 $aTEC021000$2bisacsh
072 7 $aTEC008080$2bisacsh
082 04 $a620.11295$223
082 04 $a620.11297$223
100 1 $aFelser, Claudia.
245 10 $aSpintronics :$bFrom Materials to Devices /$cedited by Claudia Felser, Gerhard H Fecher.
260 $aDordrecht :$bSpringer Netherlands :$bImprint: Springer,$c2013.
300 $aXXI, 369 p. 208 illus., 168 illus. in color.$bdigital.
505 0 $aHeusler compounds at a glance -- New Heusler compounds and their properties -- Crystal structure of Heusler compounds -- Substitution effects in double Perovskites: How the crystal structure influences the electronic properties -- Half-metallic ferromagnets -- Correlation and chemical disorder in Heusler compounds: a spectroscopical study -- Theory of the half-metallic Heusler compounds -- Electronic structure of complex oxides -- Local structure of highly spin polarized Heusler compounds revealed by nuclear magnetic resonance spectroscopy -- New materials with high spin polarization investigated by X-ray magnetic circular dichroism -- Hard X-ray photoelectron spectroscopy of new materials for spintronics -- Characterization of the surface electronic properties of Co2Cr1−xFexAl -- Magneto-optical investigations and ion beam-induced modification of Heusler compounds -- Co2Fe(Al1−xSix) Heusler alloys and their applications to spintronics -- Transport properties of Co2(Mn,Fe)Si thin films -- Preparation and investigation of interfaces of Co2Cr1−xFexAl thin films -- Tunnel magnetoresistance effect in tunnel junctions with Co2MnSi Heusler alloy electrode and MgO barrier.
520 $aSpintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and low energy consumption as particularly relevant. This monograph examines the concept of half-metallic compounds perspectives to obtain novel solutions and discusses several oxides such as perovskites, double perovskites and CrO2 as well as Heusler compounds. Such materials can be designed and made with high spin polarization and, especially in the case of Heusler compounds, many material-related problems present in current-day 3d metal systems, can be overcome. Spintronics: From Materials to Devices provides an insight into the current research on Heusler compounds and offers a general understanding of structure–property relationships, including the influence of disorder and correlations on the electronic structure and interfaces. Spintronics devices such as magnetic tunnel junctions (MTJs) and giant magnetoresistance (GMR) devices, with current perpendicular to the plane, in which Co2 based Heusler compounds are used as new electrode materials, are also introduced.From materials design by theoretical methods and the preparation and properties of the materials to the production of thin films and devices, this monograph represents a valuable guide to both novices and experts in the fields of Chemistry, Physics, and Materials Science.
650 20 $aChemistry, Physical and theoretical.
650 10 $aMaterials science.
650 0 $aSurfaces (Physics)
650 0 $aPhysical organic chemistry.
650 0 $aMaterials.
650 0 $aOptical materials.
650 24 $aOptical and Electronic Materials.
650 24 $aMaterials Science, general.
650 24 $aSurfaces and Interfaces, Thin Films.
700 1 $aFecher, Gerhard H.
776 08 $iPrinted edition:$z9789048138319
988 $a20130404
906 $0VEN