MARC Record from harvard_bibliographic_metadata

LEADER: 03687nam a22005415a 4500
001 014158712-1
005 20141003190837.0
008 130125s2004 gw | o ||0| 0|eng d
020 $a9783662070642
020 $a9783642087370 (ebk.)
020 $a9783662070642
020 $a9783642087370
024 7 $a10.1007/978-3-662-07064-2$2doi
035 $a(Springer)9783662070642
040 $aSpringer
050 4 $aQD901-999
072 7 $aPHFC$2bicssc
072 7 $aSCI016000$2bisacsh
082 04 $a548$223
100 1 $aHerman, Marian A.,$eauthor.
245 10 $aEpitaxy :$bPhysical Principles and Technical Implementation /$cby Marian A. Herman, Wolfgang Richter, Helmut Sitter.
264 1 $aBerlin, Heidelberg :$bSpringer Berlin Heidelberg :$bSpringer,$c2004.
300 $aXV, 525 p.$bonline resource.
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
347 $atext file$bPDF$2rda
490 1 $aSpringer Series in MATERIALS SCIENCE,$x0933-033X ;$v62
505 0 $aI. Basic Concepts -- 1. Introduction -- 2. Homo- and Heteroepitaxial Crystallization Phenomena -- 3. Application Areas of Epitaxially Grown Layer Structures -- II. Technical Implementation -- 4. Solid Phase Epitaxy -- 5. Liquid Phase Epitaxy -- 6. Vapor Phase Epitaxy -- 7. Molecular Beam Epitaxy -- 8. Metal Organic Vapor Phase Epitaxy -- III. In-situ Analysis of the Growth Processes -- 9. In-situ Analysis of Species and Transport -- 10. In-situ Surface Analysis -- IV. Physics of Epitaxy -- 11. Thermodynamic Aspects -- 12. Atomistic Aspects -- 13. Quantum Mechanical Aspects -- V. Heteroepitaxy -- 14. Heteroepitaxy; Growth Phenomena -- 15. Material-Related Problems of Heteroepitaxy -- 16. Closing Remarks -- References -- List of Abbreviations -- List of Metalorganic Precursors.
520 $aEpitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practicing engineers interested in materials science, solid state electronics and crystal growth.
650 20 $aChemistry, Physical and theoretical.
650 20 $aCrystallography.
650 10 $aPhysics.
650 0 $aSurfaces (Physics)
650 0 $aPhysical organic chemistry.
650 0 $aChemical engineering.
650 0 $aCrystallography.
650 0 $aOptical materials.
650 0 $aPhysics.
650 24 $aCharacterization and Evaluation of Materials.
650 24 $aIndustrial Chemistry/Chemical Engineering.
650 24 $aOptical and Electronic Materials.
700 1 $aSitter, Helmut,$eauthor.
700 1 $aRichter, Wolfgang,$eauthor.
776 08 $iPrinted edition:$z9783642087370
830 0 $aSpringer Series in MATERIALS SCIENCE ;$v62.
988 $a20140910
906 $0VEN