| Record ID | ia:cmoscircuitdesig0000bake_f8x0 |
| Source | Internet Archive |
| Download MARC XML | https://archive.org/download/cmoscircuitdesig0000bake_f8x0/cmoscircuitdesig0000bake_f8x0_marc.xml |
| Download MARC binary | https://www.archive.org/download/cmoscircuitdesig0000bake_f8x0/cmoscircuitdesig0000bake_f8x0_meta.mrc |
LEADER: 01776cam 2200397Ma 4500
001 ocn276454480
003 OCoLC
005 20220623050305.0
008 970529t20041998ii a b 001 0 eng d
040 $aCDN$beng$cCDN$dOCLCF$dOCLCO$dOCLCQ$dOCLCA$dOCLCO
020 $a9788120316829$q(pbk.)
020 $a8120316827$q(pbk.)
035 $a(OCoLC)276454480
050 4 $aTK7871.99.M44$bB35 2004
100 1 $aBaker, R. Jacob,$d1964-
245 10 $aCMOS circuit design, layout, and simulation /$cR. Jacob Baker, Harry W. Li, and David E. Boyce.
260 $aNew Delhi :$bPrentice-Hall of India,$c2004, ©1998.
300 $axxiv, 902 pages :$billustrations ;$c23 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
338 $avolume$bnc$2rdacarrier
490 1 $aIEEE Press series on microelectronic systems.
500 $a"IEEE Circuits & Systems Society, sponsor, IEEE Solid-State Circuits Society, sponsor."
504 $aIncludes bibliographical references and index.
650 0 $aMetal oxide semiconductors, Complementary$xDesign and construction.
650 0 $aIntegrated circuits$xDesign and construction.
650 0 $aMetal oxide semiconductor field-effect transistors.
650 7 $aIntegrated circuits$xDesign and construction.$2fast$0(OCoLC)fst00975545
650 7 $aMetal oxide semiconductor field-effect transistors.$2fast$0(OCoLC)fst01017614
650 7 $aMetal oxide semiconductors, Complementary$xDesign and construction.$2fast$0(OCoLC)fst01017641
700 1 $aLi, Harry W.,$d1960-
700 1 $aBoyce, David E.,$d1940-
710 2 $aInstitute of Electrical and Electronics Engineers.
830 0 $aIEEE Press series on microelectronic systems.
994 $aZ0$bIME
948 $hNO HOLDINGS IN IME - 4 OTHER HOLDINGS