| Record ID | ia:deepcentersinsem0000unse |
| Source | Internet Archive |
| Download MARC XML | https://archive.org/download/deepcentersinsem0000unse/deepcentersinsem0000unse_marc.xml |
| Download MARC binary | https://www.archive.org/download/deepcentersinsem0000unse/deepcentersinsem0000unse_meta.mrc |
LEADER: 00753cam a2200229 a 4500
001 85005408
003 DLC
005 19901010065648.5
008 850219s1986 nyua b 00100 eng
010 $a 85005408 //r90
020 $a2881241093 (Switzerland)
040 $aDLC$cDLC$dDLC
050 00 $aQC611.6.D4$bD418 1986
082 00 $a537.6/22$219
245 00 $aDeep centers in semiconductors :$ba state of the art approach /$cedited by Sokrates T. Pantelides.
260 0 $aNew York :$bGordon and Breach,$cc1986.
300 $axi, 777 p. :$bill. ;$c24 cm.
504 $aIncludes bibliographies and index.
650 0 $aSemiconductors$xDefects.
650 0 $aElectron donor-acceptor complexes.
650 0 $aImpurity centers.
700 10 $aPantelides, Sokrates T.