| Record ID | ia:effectsofheavydo00teng |
| Source | Internet Archive |
| Download MARC XML | https://archive.org/download/effectsofheavydo00teng/effectsofheavydo00teng_marc.xml |
| Download MARC binary | https://www.archive.org/download/effectsofheavydo00teng/effectsofheavydo00teng_meta.mrc |
LEADER: 01103nam 2200301Ia 4500
001 030595702
004 UFACR2605002
005 20120623083800.0
008 850509s1984 xx a b 000|0 eng d
035 $a(OCoLC)12014887
040 $afug$cFUG
090 $aLD1780 1984$b.T292
100 1 $aTeng, Ker-Wen,$d1954-
245 10 $aEffects of heavy doping and metallic contamination on electrical characteristics of semiconductor devices /$cby Ker-Wen Teng.
260 $c1984.
300 $axi, 181 leaves :$bill. ;$c28 cm.
500 $aTypescript.$5FU
502 $aThesis (Ph. D.)--University of Florida, 1984.
500 $aVita.$5FU
504 $aBibliography: leaves 177-180.
650 0 $aSemiconductor doping.
650 0 $aSemiconductors$xImpurity distribution.
650 0 $aSilicon$xElectric properties.
690 $aElectrical Engineering thesis Ph. D.$5FU
690 $aDissertations, Academic$zUF$xElectrical Engineering.$5FU
852 8 $aFU$bUFSPE$cARDIS$4UF SMATHERS, Special Coll$5Theses & Dissertations (Non-Circulating)
951 $108$aUFU01:000493745;$5FU
999 $aACR2605002