MARC record from Internet Archive

LEADER: 14034cam 2200673Ia 4500
001 ocm36213786
003 OCoLC
005 20220521022059.0
008 970116s1996 paua b 101 0 eng d
040 $aGAT$beng$cGAT$dUIU$dOCL$dYDM$dBAKER$dYDXCP$dDEBBG$dOCLCQ$dOCLCF$dOCLCQ$dOCLCO$dOCL$dOCLCO$dZAP$dOCLCQ$dQ2U
020 $a1558993312
020 $a9781558993310
035 $a(OCoLC)36213786
050 4 $aTK7874$b.M3442 1996
082 04 $a621.381$bM4182, 1996$221
084 $aUD 8400$2rvk
084 $aUQ 1100$2rvk
084 $aUX 2150$2rvk
084 $aZN 4040$2rvk
245 00 $aMaterials reliability in microelectronics VI :$bsymposium held April 8-12, 1996, San Francisco, California, U.S.A. /$ceditors, William F. Filter [and others].
246 3 $aMaterials reliability in microelectronics six
246 3 $aMaterials reliability in microelectronics 6
260 $aPittsburgh, Pa. :$bMaterials Research Society,$c©1996.
300 $axv, 583 pages :$billustrations ;$c24 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
338 $avolume$bnc$2rdacarrier
490 1 $aMaterials Research Society symposium proceedings ;$vv. 428
504 $aIncludes bibliographical references and indexes.
505 00 $t30 Years of Electromigration Research: A Grand Masters' Perspective /$rJ. R. Lloyd --$tOxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering /$rS. Hymes, K. S. Kumar, S. P. Murarka, W. Wang and W. A. Lanford --$tOxidation Resistance of Copper Alloy Thin Films Formed by Chemical Vapor Deposition /$rP. Atanasova, V. Bhaskaran, T. Kodas and M. Hampden-Smith --$tIn Situ UHV Electromigration in Cu Films /$rR. W. Vook and B. H. Jo --$tElectromigration and Diffusion in Pure Cu and Cu(Sn) Alloys /$rC.-K. Hu, K. L. Lee, D. Gupta and P. Blauner --$tActivation Energy of Electromigration in Copper Thin Film Conductor Lines /$rA. Gladkikh, Y. Lereah, M. Karpovski, A. Palevski and Yu. S. Kaganovskii --$tElectromigration in Submicron Wide Copper Lines /$rO. V. Kononenko, V. N. Matveev, Yu. I. Koval, S. V. Dubonos and V. T. Volkov --$tAdhesion Reliability of Cu-Cr Alloy Films to Polyimide /$rE. C. Ahn, Jin Yu, T. C. Oh and I. S. Park --$tElectromigration Characterization for Multilevel Metallizations Using Textured AlCu /$rLarry M. Ting and Qi-Zhong Hong --$tCharacterization of Electromigration Failures Using a Novel Test Structure /$rMartin Gall, Dharmesh Jawarani and Hisao Kawasaki --$tEffect of the Finite Source Material on Electromigration Performance of a Novel Interconnect Test Structure /$rNguyen D. Bui --$tThe Effects of Accelerated Stress Conditions on Electromigration Failure Kinetics and Void Morphology /$rS. Bauguess, L. H. Liu, M. L. Dreyer, M. Griswold and E. Hurley --$tIn Situ Observations of Pre-Patterned Void Interactions Under Electromigration-Induced Stress /$rRichard Frankovic and Gary H. Bernstein --$tDuty Cycle and Frequency Effects of Pulsed-DC Currents on Electromigration-Induced Stress in Al Interconnects /$rRichard Frankovic, Gary H. Bernstein and J. Joseph Clement --$tElectromigration in VLSI Metallization Test Structures Stressed Over a Range of DC Pulse Conditions and Frequencies up to 133 MHz /$rD. W. Malone and R. E. Hummel --$tCurrent Dependence of Reversible Electromigration Induced Resistance Changes in Short Al Lines and Interpretation of Irreversible Effects /$rA. H. Verbruggen, M. J. C. van den Homberg, A. J. Kalkman, J. R. Kraayeveld, A. W.-J. Willemsen and S. Radelaar --$tSingle-Crystalline and Bamboo Al Lines Fabricated by Graphoepitaxy: Microstructure and 1/f Noise Measurements /$rMarc J. C. van den Homberg, A. H. Verbruggen, P. F. A. Alkemade and S. Radelaar --$tCharacterization of the Early Stages of EM in Al-Based Metal Lines by Means of a HRRMT Based on an Extremely Stable Ambient Temperature /$rV. D'Haeger, W. De Ceuninck, L. De Schepper and L. M. Stals --$tEstablishing a Quantitative Relationship Between Harmonic Signals and Damage in Interconnects /$rQingzhe Wen and David R. Clarke --$tElectromigration Damage Studied by 1/f Noise /$rK. Dagge --$tGrain-Boundary Slit Propagation in an Electric Field /$rL. M. Klinger, X. Chu, C. L. Bauer and W. W. Mullins --$tNumerical Simulation of Surface Diffusion Controlled Motion and Shape Change of Electromigration Voids /$rO. Kraft, U. E. Mockl and E. Arzt --$tElectromigration in Thin Metal Films in the Presence of Two Stress-Relaxation Mechanisms /$rA. Katsman and L. Levin --$tMicroscopic Estimates for Electromigration Velocities of Intragranular Voids in Thin Aluminum Lines /$rL. K. Wickham and J. P. Sethna --$tA Molecular Dynamics Study of Cu Segregation to the [Sigma]11 <110>/(113)(113) Grain Boundary in Al /$rHanchen Huang, T. Diaz de la Rubia and M. J. Fluss --$tCopper Migration and Precipitate Dissolution in Aluminum/Copper Lines During Electromigration Testing /$rT. M. Shaw, C.-K. Hu, K. Y. Lee and R. Rosenberg --$tMicrostructure of Passivated Al-Cu and Al-Si-Cu Conductor Lines: Interaction of Precipitates, Defects, and Mechanical Stresses /$rA. G. Dirks --$tIn Situ Study of Al[subscript 2]Cu Precipitate Evolution During Electromigration in Submicron Al Interconnects /$rSilva K. Theiss and J. A. Prybyla --$tInfluence of Solute Additions on Electromigration in Aluminum /$rChoong-Un Kim, J. W. Morris, Jr., F. Y. Genin and M. J. Fluss --$tCopper Diffusion Into Aluminum-Silicon Metallizations by Accelerated Thermal and Electrical Stressing /$rG. O. Ramseyer, L. H. Walsh, J. V. Beasock, H. F. Helbig, R. C. Lacoe and S. Brown --$tElectromigration in Single-Crystal Aluminum Lines Pre-Damaged by Nanoindentation /$rYoung Chang Jao, Shefford P. Baker, Michael P. Knauss and Eduard Arzt --$tThe Improvement of Immunity to Electromigration by Means of Microstructural Design /$rO. V. Kononenko and V. N. Matveev --$tExperimental Measurements of Grain Boundary Rotation Toward Bamboo in Post-Pattern Annealing /$rD. L. Barr, W. L. Brown and M. Ohring --$tAnalysis of Geometrical and Microstructural Effects on Void Formation in Metallization: Observation and Modelling /$rW. C. Shih, A. Ghiti, K. S. Low, A. L. Greer, A. G. O'Neill and J. F. Walker --$tDirect Correlation Between Grain Configuration and Electromigration Damage Development /$rW. C. Shih, A. Ghiti, K. S. Low, A. L. Greer, A. G. O'Neill and J. F. Walker --$tFurther Investigations of the Microstructural Mechanism of Electromigration Failure in Al-Cu Lines With Quasi-Bamboo Microstructures /$rS. H. Kang, F. Y. Genin, C. Kim and J. W. Morris, Jr. --$tFilm Crystallographic Texture and Substrate Surface Roughness in Layered Aluminum Metallization /$rK. P. Rodbell, V. Svilan, L. M. Gignac, P. W. DeHaven, R. J. Murphy and T. J. Licata --$tEvaluation of Microstructure Evolution of Al-1%Si-0.5%Cu Thin Film Induced by Post Deposition Processing /$rC. Zaccherini, M. Bacchetta, G. Pavia, L. Riva and C. Savoia --$tThe Failure Mechanism of MOCVD TiN Diffusion Barrier at High Temperature /$rHoojeong Lee, Robert Sinclair, Pamela Li and Bruce Roberts --$tResidual Gas Phase Contamination of Al-Cu Alloy Films and Its Effect on Electromigration Behavior /$rImran Hashim, Ivo J. Raaijmakers, Glen Adler, Ardy Sidhwa and Sudhir Chopra --$tApplication of Electron Spin Resonance as a Tool for Building in Reliability (BIR) /$rJohn F. Conley, Jr. --$t1/f Noise in the Tunneling Current of Thin Gate Oxides /$rG. B. Alers, D. Monroe, K. S. Krisch, B. E. Weir and A. M. Chang --$tGeneration of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress /$rT. Brozek, Y. D. Chan and C. R. Viswanathan --$tAccelerated Breakdown in Thin Oxide Films Due to Interfacial Stress and Carrier Depletion /$rV. Subramanian, N. Bhat and K. Saraswat --$tNew Insights Into Oxide Trapped Holes and Other Defects: Implications for Reliability Studies /$rTimothy R. Oldham and Aivars J. Lelis --$tTransient Photocurrent Spectroscopy of Trap Levels in Ultra-Thin SiO[subscript 2] Films /$rY. Miura and S. Fujieda --$tLimitations of Plasma Charging Damage Measurements Using MOS Capacitor Structures /$rShawming Ma, Wael L. N. Abdel-Ati and James P. McVittie --$tEffect of Growth Conditions on the Reliability of Ultrathin MOS Gate Oxides /$rTien-Chun Yang and Krishna C. Saraswat --$tFront-End Integration Effects on Gate Oxide Quality /$rF. Lin, S. A. Ajuria, V. Ilderem and M. P. Masquelier --$tReactive Plasma Sputter Deposition of Silicon Oxide /$rK. K. Vossough and C. E. Hunt --$tBuilding in Reliability Through a 100X Reduction in Mobile Ions in a 0.8 [mu]m BiCMOS Process /$rLarry Anderson, Suketu Parikh and Samuel Nagalingam --$tHot Carrier Reliability in Sub-0.1[mu]m nMOSFET Devices /$rSamar K. Saha --$tHot Carrier Effects in Deep Submicron nMOSFETS /$rAbhijit Phanse and Samar Saha --$tStructure and Growth of N[subscript 2]O Gate Oxynitrides /$rK. A. Ellis, E. C. Carr and R. A. Buhman --$tLow Temperature [actual symbol not reproducible] Two-Step N[subscript 2]O Annealed Thin Gate Oxides /$rChao Sung Lai, Chung Len Lee, Tan Fu Lei, Tien Sheng Chao, Chun Hung Peng and Han Ching Wang --$tA Two-Step, Lightly Nitrided Gate Oxidation Process for Sub-0.5 [mu]m CMOS Technology /$rP. K. Roy, Y. Ma and M. T. Flemming --$tTunneling Current Through MIS Structures With Ultra-Thin Insulators /$rH. Fujioka, H.-J. Wann, D.-G. Park, Y.-C. King, Y.-F. Chyan, M. Oshima and C. Hu
505 80 $tTrapping Behavior of Thin Siliconoxynitride Layers Prepared by Rapid Thermal Processing /$rR. Beyer, H. Burghardt, R. Reich, E. Thomas, D. Grambole, F. Herrmann, T. Scholz, J. Albrecht, D. R. T. Zahn and T. Gessner --$tAn Optical Approach to Evaluating the Effects of Chlorine on the Quality of Si/SiO[subscript 2] Interfaces /$rJulia Sherry, John Lowell, Tim Hossain and Damon DeBusk --$tA Novel Method for Studying Degradation Related to Plasma Processing of Silicon Wafers /$rJ. Lagowski, A. Hoff, L. Jastrzebski, P. Edelman and T. Esry --$tA New, Real-Time Method for Measuring Mobile Charge and Injected Charge in SiO[subscript 2] on Si /$rP. Edelman, J. Lagowski, A. Savchouk, A. Hoff, L. Jastrzebski and E. Persson --$tNon-Contact Mapping of Fe Contamination in Oxidized Si Wafers With Sensitivity in Part-Per-Trillion Range /$rJacek Lagowski and Piotr Edelman --$tNon-Destructive Assessment of Semiconductor Carrier Lifetime Using Photothermal Radiometry /$rS. Amirhaghi, A. J. Kenyon, M. Federighi and C. W. Pitt --$tThe Mechanics of a Free-Standing Strained Film/Compliant Substrate System /$rL. B. Freund --$tAn Analysis of Void Nucleation in Passivated Interconnect Lines Due to Vacancy Condensation and Interface Contamination /$rR. J. Gleixner and W. D. Nix --$tFinite Element Modeling of Grain Aspect Ratio and Strain Energy Density in a Textured Copper Thin Film /$rR. P. Vinci and J. C. Bravman --$tVoid-Free Metallization by Controlling Sputtering Conditions of TiN Barrier Metal Films /$rT. Yamaoka and T. Yamauchi --$tRelationship Between the Void and Hillock Formation and the Grain Growth in Thin Aluminum Films /$rO. V. Kononenko and V. N. Matveev --$tMeasurements of Stress Evolution During Thin Film Deposition /$rE. Chason and J. A. Floro --$tProcessing-Induced Stresses and Curvature in Patterned Lines on Silicon Wafers /$rY.-L. Shen, S. Suresh and I. A. Blech --$tIsothermal Stress Relaxation in Al, AlCu and AlVPd Films /$rJ. P. Lokker, J. F. Jongste, G. C. A. M. Janssen and S. Radelaar --$tThe Effect of the Passivation Material on the Stress and Stress Relaxation Behavior of Narow Al-Si-Cu Lines /$rA. Witvrouw, P. Flinn and K. Maex --$tAnalysis of Stresses and Strains in Passivated Metal Lines /$rI. Eppler, H. Schroeder, U. Burges and W. Schilling --$tThermal- and Electromigration-Induced Stresses in Passivated Al- and AlSiCu-Interconnects /$rD. Beckers, H. Schroeder, I. Eppler and W. Schilling --$tTemperature Dependence of Residual Stresses in Capped Blanket Cu Films of Various Thicknesses /$rG. Langelaan, S. Salmoto and M. Moske --$tSubmicron Resolution X-Ray Strain Measurements on Patterned Films: Some Hows and Whys /$rM. A. Marcus, A. A. Macdowell, E. D. Isaacs, K. Evans-Lutterodt and G. E. Ice --$tResidual Stress and Lattice Distortion Mapping of Patterned Devices Which Failed Electromigration Testing Using the Microbeam X-Ray Diffraction (MXRD) Technique /$rB. R. York, H. L. Pfizenmayer, C. H. Lee and R. O. Carnes --$tLocal and Global Stress Distributions in BEOL Metallization /$rI. C. Noyan, E. G. Liniger, C.-K. Hu, P.-C. Wang and G. S. Cargill III.
650 0 $aMicroelectronics$xReliability$vCongresses.
650 0 $aMicroelectronics$xMaterials$xTesting$vCongresses.
650 0 $aMicrostructure$vCongresses.
650 0 $aMetallizing$vCongresses.
650 7 $aMetallizing.$2fast$0(OCoLC)fst01017914
650 7 $aMicroelectronics$xMaterials$xTesting.$2fast$0(OCoLC)fst01019774
650 7 $aMicroelectronics$xReliability.$2fast$0(OCoLC)fst01019778
650 7 $aMicrostructure.$2fast$0(OCoLC)fst01020118
650 07 $aMikroelektronik.$0(DE-588)4039207-7$2gnd
650 07 $aMikrostruktur.$0(DE-588)4131028-7$2gnd
650 07 $aZuverlässigkeit.$0(DE-588)4059245-5$2gnd
650 07 $aKongress.$2swd
650 07 $aMikroelektronik.$2swd
650 07 $aMikrostruktur.$2swd
650 07 $aZuverlässigkeit.$2swd
655 4 $aKongress$zSan Francisco (Calif.)$y1996.
655 7 $aConference papers and proceedings.$2fast$0(OCoLC)fst01423772
655 7 $aSan Francisco (Calif., 1996)$2swd
700 1 $aFilter, William F.
776 08 $iOnline version:$tMaterials reliability in microelectronics VI.$dPittsburgh, Pa. : Materials Research Society, ©1996$w(OCoLC)714761193
830 0 $aMaterials Research Society symposia proceedings ;$vv. 428.
938 $aBaker & Taylor$bBKTY$c76.00$d80.95$i1558993312$n0003285976$sactive
938 $aYBP Library Services$bYANK$n1182259
029 1 $aAU@$b000013177120
029 1 $aDEBBG$bBV013220210
029 1 $aZWZ$b027095258
994 $aZ0$bP4A
948 $hNO HOLDINGS IN P4A - 71 OTHER HOLDINGS