| Record ID | ia:sigegaasinpheter0000yuan |
| Source | Internet Archive |
| Download MARC XML | https://archive.org/download/sigegaasinpheter0000yuan/sigegaasinpheter0000yuan_marc.xml |
| Download MARC binary | https://www.archive.org/download/sigegaasinpheter0000yuan/sigegaasinpheter0000yuan_meta.mrc |
LEADER: 01085cam a2200277 a 4500
001 98038194
003 DLC
005 20111108092737.0
008 980717s1999 nyua bi 001 0 eng
010 $a 98038194
020 $a0471197467 (cloth : alk. paper)
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.96.B55$bY83 1999
082 00 $a621.3815/28$221
100 1 $aYuan, J. S.
245 10 $aSiGe, GaAs, and InP heterojunction bipolar transistors /$cJiann S. Yuan.
260 $aNew York :$bWiley,$cc1999.
300 $axvii, 463 p. :$bill. ;$c25 cm.
440 0 $aWiley series in microwave and optical engineering
500 $a"A Wiley Interscience publication."
504 $aIncludes bibliographical references and index.
650 0 $aBipolar transistors.
650 0 $aJunction transistors.
856 42 $3Contributor biographical information$uhttp://www.loc.gov/catdir/bios/wiley044/98038194.html
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/description/wiley037/98038194.html
856 4 $3Table of Contents$uhttp://www.loc.gov/catdir/toc/onix06/98038194.html