MARC record from Internet Archive

LEADER: 02979cam 2200397Ia 4500
001 ocn264151090
003 OCoLC
005 20211201141722.0
008 081028s2000 nyua 001 0 eng d
040 $aSINAP$beng$cSINAP$dAU@$dYDXCP$dBTCTA$dBAKER$dOCLCF$dOCLCO$dOCLCQ$dUKBTH
019 $a173807327
020 $a9780387740997$q(pbk.)
020 $a0387740996$q(pbk.)
035 $a(OCoLC)264151090$z(OCoLC)173807327
050 $aTK
082 04 $a621.39/732$221
100 1 $aBernstein, Kerry,$d1956-
245 10 $aSOI circuit design concepts /$cKerry Bernstein, Norman J. Rohrer.
260 $aNew York :$bSpringer,$c©2000.
300 $axvii, 222 pages :$billustrations ;$c24 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
338 $avolume$bnc$2rdacarrier
505 0 $aThe Time for SOI -- SOI Device Structures -- SOI Device Electrical Properties -- Static Circuit Design Response -- Dynamic Circuit Design Considerations -- SRAM Cache Design Considerations -- Specialized Function Circuits in SOI -- Global Chip Design Considerations -- Future Oppurtunities in SOI.
520 $aMarket demand for microprocessor performance has motivated continued scaling of CMOS through a succession of lithography generations. Quantum mechanical limitations to continued scaling are becoming readily apparent. Partially Depleted Silicon-on-Insulator (PD-SOI) technology is emerging as a promising means of addressing these limitations. It also introduces additional design complexity which must be well understood. SOI Circuit Design Concepts first introduces the student or practicing engineer to SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms which are observed in common high-speed microprocessor designs. Rules of thumb and comparisons to conventional bulk CMOS are offered to guide implementation. SOI's ultimate advantage, however, may lie in the unique circuit topologies it supports; a number of these novel new approaches are described as well. SOI Circuit Design Concepts draws upon the latest industry literature as well as the firsthand experiences of its authors. It is an ideal introduction to the concepts of governing SOI use and provides a firm foundation for further study of this exciting new technology paradigm.
650 0 $aMetal oxide semiconductors, Complementary$xDesign and construction.
650 0 $aSilicon-on-insulator technology.
650 7 $aMetal oxide semiconductors, Complementary$xDesign and construction.$2fast$0(OCoLC)fst01017641
650 7 $aSilicon-on-insulator technology.$2fast$0(OCoLC)fst01118704
700 1 $aRohrer, Norman J.
938 $aBaker & Taylor$bBKTY$c79.95$d79.95$i0387740996$n0007432248$sactive
938 $aBaker and Taylor$bBTCP$nBK0007432248
938 $aYBP Library Services$bYANK$n2706895
029 1 $aAU@$b000043026875
994 $aZ0$bP4A
948 $hNO HOLDINGS IN P4A - 9 OTHER HOLDINGS