| Record ID | marc_columbia/Columbia-extract-20221130-001.mrc:109611474:1210 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-001.mrc:109611474:1210?format=raw |
LEADER: 01210cam a2200349 a 4500
001 87983
005 20220518194300.0
008 820714t19821982nyua b 001 0 eng
010 $a 81007607
020 $a0471085006
035 $a(OCoLC)7550858
035 $a(OCoLC)ocm07550858
035 $a(CStRLIN)NYCG82-B30643
035 $9AAK3525CU
035 $a(NNC)87983
035 $a87983
040 $dCPaHP
050 00 $aTK7871.99.M44$bN52
082 0 $a621.3815/2$219
090 $aTK7871.99.M44$bN52
100 1 $aNicollian, E. H.$0http://id.loc.gov/authorities/names/n81045533
245 10 $aMOS (metal oxide semiconductor) physics and technology /$cE.H. Nicollian, J.R. Brews.
260 $aNew York :$bWiley,$c[1982], ©1982.
300 $axv, 906 pages :$billustrations ;$c24 cm
336 $atext$2rdacontent
337 $aunmediated$2rdamedia
338 $avolume$2rdacarrier
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references and index.
650 0 $aMetal oxide semiconductors.$0http://id.loc.gov/authorities/subjects/sh85084066
700 1 $aBrews, J. R.$0http://id.loc.gov/authorities/names/n81045532
852 00 $boff,eng$hTK7871.99.M44$iN52