| Record ID | marc_columbia/Columbia-extract-20221130-001.mrc:584355908:1330 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-001.mrc:584355908:1330?format=raw |
LEADER: 01330cam a22003498a 4500
001 472108
005 20220519024717.0
008 860516t19861986nyua b 001 0 eng
010 $a 85005408
020 $a2881241093 (Switzerland)
035 $a(OCoLC)11785855
035 $a(OCoLC)ocm11785855
035 $a(CStRLIN)NYCG86-B49205
035 $9ACB2532CU
035 $a(NNC)472108
035 $a472108
040 $dCStRLIN$dNNC
050 00 $aQC611.6.D4$bD418 1985
082 0 $a537.6/22$219
090 $aQC611.6.D4$bD418 1986
245 00 $aDeep centers in semiconductors :$ba state of the art approach /$cedited by Sokrates T. Pantelides.
260 $aNew York :$bGordon and Breach,$c[1986], ©1986.
300 $axi, 777 pages :$billustrations ;$c24 cm
336 $atext$2rdacontent
337 $aunmediated$2rdamedia
338 $avolume$2rdacarrier
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductors$xDefects.$0http://id.loc.gov/authorities/subjects/sh85119908
650 0 $aElectron donor-acceptor complexes.$0http://id.loc.gov/authorities/subjects/sh85042207
650 0 $aImpurity centers.$0http://id.loc.gov/authorities/subjects/sh85064681
700 1 $aPantelides, Sokrates T.$0http://id.loc.gov/authorities/names/n78033353
852 00 $boff,eng$hQC611.6.D4$iD418 1986