| Record ID | marc_columbia/Columbia-extract-20221130-002.mrc:339640603:1175 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-002.mrc:339640603:1175?format=raw |
LEADER: 01175cam a2200337 a 4500
001 768499
005 20220526004227.0
008 890727t19881988enk b 001 0 eng
010 $a 88156353
020 $a0852964757
035 $a(OCoLC)17886078
035 $a(OCoLC)ocm17886078
035 $a(CStRLIN)NYCG89-B55260
035 $9ADV9551CU
035 $a(NNC)768499
035 $a768499
050 00 $aTK7871.15.S55$bP76 1988
082 0 $a620.1/93$219
090 $aTK7871.15.S55$bP76 1988
245 00 $aProperties of silicon.
260 $aLondon ;$aNew York :$bINSPEC, Institution of Electrical Engineers,$c[1988], ©1988.
300 $axxv, 1100 pages ;$c29 cm.
336 $atext$2rdacontent
337 $aunmediated$2rdamedia
338 $avolume$2rdacarrier
490 1 $aEMIS datareviews series ;$vno. 4
504 $aIncludes bibliographies and index.
650 0 $aSilicon.$0http://id.loc.gov/authorities/subjects/sh85122512
710 2 $aINSPEC (Information service)$0http://id.loc.gov/authorities/names/n85179411
830 0 $aEMIS datareviews series ;$vno. 4.$0http://id.loc.gov/authorities/names/n84717315
852 00 $boff,eng$hTK7871.15.S55$iP76 1988