| Record ID | marc_columbia/Columbia-extract-20221130-002.mrc:410839392:1270 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-002.mrc:410839392:1270?format=raw |
LEADER: 01270cam a22003618a 4500
001 823351
005 20220526015834.0
008 900327s1990 njua b 001 0 eng
010 $a 89022819
020 $a0136664962
035 $a(OCoLC)20218264
035 $a(OCoLC)ocm20218264
035 $a(CStRLIN)NYCG90-B20058
035 $9AEJ6976CU
035 $a(NNC)823351
035 $a823351
040 $dNNC
050 00 $aQC611$b.S563 1990
082 0 $a537.6/22$220
090 $aQC611$b.S563 1990
100 1 $aShur, Michael.$0http://id.loc.gov/authorities/names/n85385797
245 10 $aPhysics of semiconductor devices /$cMichael Shur.
260 $aEnglewood Cliffs, NJ :$bPrentice Hall,$c1990.
263 $a9001
300 $axxiv, 680 pages :$billustrations ;$c25 cm
336 $atext$2rdacontent
337 $aunmediated$2rdamedia
338 $avolume$2rdacarrier
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductors.$0http://id.loc.gov/authorities/subjects/sh85119903
650 0 $aJunction transistors.$0http://id.loc.gov/authorities/subjects/sh85071006
650 0 $aMetal oxide semiconductor field-effect transistors.$0http://id.loc.gov/authorities/subjects/sh85084065
852 00 $boff,eng$hQC611$i.S563 1990