| Record ID | marc_columbia/Columbia-extract-20221130-005.mrc:140940938:1194 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-005.mrc:140940938:1194?format=raw |
LEADER: 01194mam a2200325 a 4500
001 2107919
005 20220615204403.0
008 971231t19971997enka b 001 0 eng d
010 $agb 98002330
015 $aGB98-2330
020 $a0852969325
035 $a(OCoLC)ocm38206806
035 $9ANE2565CU
035 $a(NNC)2107919
035 $a2107919
040 $aUKM$cUKM$dCUS
082 04 $a546.6835$221
090 $aTK7871.15.S55$bP76 1997
245 00 $aProperties of porous silicon /$cedited by Leigh Canham.
260 $aLondon :$bIEE :$bINSPEC, The Institution of Electrical Engineers,$c[1997], ©1997.
300 $axviii, 405 pages :$billustrations ;$c29 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
490 1 $aEMIS datareviews series ;$vno. 18
504 $aIncludes bibliographical references and index.
650 0 $aSilicon.$0http://id.loc.gov/authorities/subjects/sh85122512
700 1 $aCanham, Leigh T.$0http://id.loc.gov/authorities/names/n92015993
710 2 $aINSPEC (Information service)$0http://id.loc.gov/authorities/names/n85179411
830 0 $aEMIS datareviews series ;$vno. 18.
852 00 $boff,eng$hTK7871.15.S55$iP75 1997g