| Record ID | marc_columbia/Columbia-extract-20221130-005.mrc:228100315:1229 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-005.mrc:228100315:1229?format=raw |
LEADER: 01229mam a2200301 a 4500
001 2168097
005 20220615221618.0
008 980611t19981998maua b 001 0 eng
010 $a 98027506
020 $a0792382242 (alk. paper)
035 $a(OCoLC)ocm39307393
035 $9ANN9189CU
035 $a2168097
040 $aDLC$cDLC$dC#P$dOrLoB-B
050 00 $aTK7871.15.S55$bK36 1998
082 00 $a621.3815$221
100 1 $aKamins, Theodore I.$0http://id.loc.gov/authorities/names/n85128586
245 10 $aPolycrystalline silicon for integrated circuits and displays /$cby Ted Kamins.
250 $a2nd ed.
260 $aBoston :$bKluwer Academic Publishers,$c[1998], ©1998.
300 $axv, 378 pages :$billustrations ;$c25 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
504 $aIncludes bibliographical references (p. [317]-368) and index.
505 00 $g1.$tDeposition --$g2.$tStructure --$g3.$tDopant Diffusion and Segregation --$g4.$tOxidation --$g5.$tElectrical Properties --$g6.$tApplications.
650 0 $aIntegrated circuits$xMaterials.
650 0 $aSilicon$xElectric properties.$0http://id.loc.gov/authorities/subjects/sh85122513
852 00 $boff,eng$hTK7871.15.S55$iK36 1998