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LEADER: 02961mam a2200337 a 4500
001 2306096
005 20220616014853.0
008 980424t19991999maua b 001 0 eng
010 $a 98023682
020 $a0070655235
035 $a(OCoLC)ocm39042960
035 $9APG0507CU
035 $a2306096
040 $aDLC$cDLC$dGZM$dOrLoB-B
050 00 $aTK7871.99.M44$bT77 1999
082 00 $a621.3815/284$221
100 1 $aTsividis, Yannis.$0http://id.loc.gov/authorities/names/n85027505
245 10 $aOperation and modeling of the MOS transistor /$cYannis Tsividis.
246 3 $aMOS transistor
250 $a2nd ed.
260 $aBoston :$bWCB/McGraw-Hill,$c[1999], ©1999.
300 $axx, 620 pages :$billustrations ;$c24 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
504 $aIncludes bibliographical references and index.
505 00 $gCh. 1.$tSemiconductors, Junctions, and MOSFET Overview --$gCh. 2.$tThe Two-Terminal MOS Structure --$gCh. 3.$tThe Three-Terminal MOS Structure --$gCh. 4.$tThe Four-Terminal MOS Transistor --$gCh. 5.$tMOS Transistors with Ion-Implanted Channels --$gCh. 6.$tSmall-Dimension Effects /$rD. Antoniadis --$gCh. 7.$tThe MOS Transistor in Dynamic Operation - Large-Signal Modeling --$gCh. 8.$tSmall-Signal Modeling for Low and Medium Frequencies --$gCh. 9.$tHigh-Frequency Small-Signal Models --$gCh. 10.$tMOSFET Modeling for Circuit Simulation --$gApp. A.$tEnergy Bands and Related Concepts --$gApp. B.$tBasic Laws of Electrostatics in One Dimension --$gApp. C.$tCharge Density, Electric Field, and Potential in the pn Junction --$gApp. D.$tEnergy Band Diagrams for the Two-Terminal MOS Structure --$gApp. E.$tCharge Density, Electric Field, and Potential in the Two-Terminal MOS Structure --$gApp. F.$tGeneral Analysis of the Two-Terminal MOS Structure --$gApp. G.$tCareful Definitions for the Limits of Moderate Inversion --
505 80 $gApp. H.$tEnergy Band Diagrams for the Three-Terminal MOS Structure --$gApp. I.$tGeneral Analysis of the Three-Terminal MOS Structure --$gApp. J.$tDrain Current Formulation Using Quasi-Fermi Potentials --$gApp. K.$tResults of a Detailed Formulation for the Drain Current and Drain Small-Signal Conductance in the Saturation Region --$gApp. L.$tEvaluation of the Intrinsic Transient Source and Drain Currents --$gApp. M.$tCharges for the Accurate Strong-Inversion Model --$gApp. N.$tQuantities Used in the Derivation of the Non-Quasi-Static y-Parameter Model.
520 $aExtensively revised and updated, this, the second edition of the text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor - the key element of most modern microelectronic chips.
650 0 $aMetal oxide semiconductors$xMathematical models.
650 0 $aMetal oxide semiconductor field-effect transistors$xMathematical models.
852 00 $bsci$hTK7871.99.M44$iT77 1999