| Record ID | marc_columbia/Columbia-extract-20221130-005.mrc:98269915:2003 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-005.mrc:98269915:2003?format=raw |
LEADER: 02003mam a2200289 a 4500
001 2075753
005 20220615200110.0
008 970128t19981998nyua b 001 0 eng
010 $a 97004311
020 $a0471152374 (cloth : acid-free paper)
035 $a(OCoLC)ocm36327473
035 $9AMW2447CU
035 $a2075753
040 $aDLC$cDLC$dOrLoB-B
050 00 $aQC611$b.M674 1998
082 00 $a621.3815/2$221
245 00 $aModern semiconductor device physics /$cedited by S.M. Sze.
260 $aNew York :$bWiley,$c[1998], ©1998.
300 $axii, 556 pages :$billustrations ;$c25 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references and index.
505 00 $tIntroduction /$rS. M. Sze --$g1.$tBipolar Transistors /$rPeter M. Asbeck --$g2.$tCompound-Semiconductor Field-Effect Transistors /$rMichael S. Shur and Tor A. Fjeldly --$g3.$tMOSFETs and Related Devices /$rS. J. Hillenius --$g4.$tPower Devices /$rB. Jayant Baliga --$g5.$tQuantum-Effect and Hot-Electron Devices /$rS. Luryi and A. Zaslavsky --$g6.$tActive Microwave Diodes /$rHeribert Eisele and George I. Haddad --$g7.$tHigh-Speed Photonic Devices /$rTien Pei Lee and S. Chandrasekhar --$g8.$tSolar Cells /$rMartin A. Green --$gApp. A.$tList of Symbols --$gApp. B.$tInternational System of Units (SI Units) --$gApp. C.$tUnit Prefixes --$gApp. D.$tGreek Alphabet --$gApp. E.$tPhysical Constants --$gApp. F.$tLattice Constants at 300 K --$gApp. G.$tProperties of Important Element and Binary Semiconductors --$gApp. H.$tProperties of Si and GaAs at 300 K --$gApp. I.$tProperties of Selected III-V Compound Semiconductors --$gApp. J.$tProperties of SiO[subscript 2] and Si[subscript 3]N[subscript 4] at 300 K.
650 0 $aSemiconductors.$0http://id.loc.gov/authorities/subjects/sh85119903
700 1 $aSze, S. M.,$d1936-$0http://id.loc.gov/authorities/names/n81010934
852 00 $boff,eng$hQC611$i.M674 1998