MARC Record from marc_columbia

LEADER: 11675cam a2200337Ia 4500
001 4756061
005 20221103032519.0
008 040514t20042004paua b 101 0 eng d
020 $a1558997377
035 $a(OCoLC)ocm55141189
035 $a(NNC)4756061
035 $a4756061
040 $aLHL$cLHL$dOrLoB-B
090 $aTK7871.99.C65$bP76 2003
245 00 $aProgress in compound semiconductor materials III--electronic and optoelectronic applications :$bsymposium held December 1-4, 2003, Boston, Massachusetts /$ceditors: Daniel J. Friedman [and others].
260 $aWarrendale, Pa. :$bMaterials Research Society,$c[2004], ©2004.
300 $axiii, 398 pages :$billustrations ;$c24 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
490 1 $aMaterials Research Society symposium proceedings ;$vvol. 799
505 80 $tSynthesis of aligned ZnO hexagonal nanorods and its application to ZnS based DC electroluminescent devices /$rTakashi Hirate, Hironori Tanaka, Shinya Sasaki, Makoto Ozawa, Weichi Li and Tomomass Satoh -- $tPolarization spectroscopy of charged single self-assembled quantum dots /$rMorgan E. Ware, Allan Bracker, Daniel Gammon and David Gershoni -- $tGrowth structure and optical properties of III-nitride quantum dots /$rHadis Morkoc, Arup Neogi and Martin Kuball -- $tDiffuse X-ray scattering from InGaAs/GaAS quantum dots /$rRolf Kohler, Daniil Grigoriev, Michael Hanke, Martin Schmidbauer, Peter Schafer, Stanislav Besedin, Udo W. Pohl, Roman L. Sellin, Dieter Bimberg, Nikolai D. Zakharov and Peter Werner -- $tNear-field magneto-photoluminescence of singe self-organized quantum dots /$rA. M. Mintairov, A. S. Vlasov and J. L. Merz -- $tQuantum dot lasers and amplifiers /$rUdo W. Pohl and Dieter Bimberg -- $t1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures /$rV. M. Ustinov, A. E. Zhukov, A. R. Kovsh, N. A. Maleev, S. S. Mikhrin, A. P. Vasil'ev, E. V. Nikitina, E. S. Semenova, N. V. Kryzhanovskaya, Yu. G. Musikhin, Yu. M. Shernyakov, M. V. Maximov, N. N. Ledentsov, D. Bimberg and Zh. I. Alferov -- $tNanoengineered quantum dot active medium for thermally-stable laser diodes /$rV. Tokranov, M. Yakimov, A. Katsnelson, M. Lamberti, G. Agnello and S. Oktyabrsky -- $tFirst electrically injected QD-MCLED emitting at 1.3 [mu]m, grown by metal organic chemical vapor deposition /$rV. Tasco, M. T. Todaro, M. De Giorgi, M. De Vittorio, R. Cingolani and A. Passaseo -- $tGrowth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31 [mu]m /$rV. Celibert, B. Salem, G. Guillot, C. Bru-Chevallier, L. Grenouillet, P. Duvaut, P. Gilet and A. Million.
500 $a"The proceedings contains papers presented at Symposium Z, 'Progress in Compound Semiconductor Materials III--Electronic and Optoelectronic Applications,' held December 1-4 at the 2003 MRS Fall Meeting in Boston, Massachusetts."--p. xiii.
504 $aIncludes bibliographical references and indexes.
505 00 $tThe effects of atmosphere, temperature, and bandgap on the annealing of GaInNAs for solar cell applications /$rA. J. Ptak, Sarah Kurtz, M. Young and C. Kramer -- $tAnalysis of emission rate measurements in a material showing a meyer-neldel rule /$rRichard S. Crandall -- $tMBE growth study of GaAsSbN/GaAs single quantum wells /$rLiangjin Wu, Shanthi Iyer, Kalyan Nunna, Jia Li, Sudhakar Bharatan, Ward Collis and Kevin Matney -- $tGrowth and characterization of GaPNAs on Si /$rJohn Geisz, J. M. Olson, W. E. McMahon, T. Hannappel, K. Jones, H. Moutinho and M. M. Al-Jassim -- $tAnalysis of photoluminescence efficiency of annealed GaInNAs quantum well grown by solid source molecular beam epitaxy /$rNg Tien Khee, Yoon Soon Fatt and Fan Weijun -- $tLaser power and temperature dependent photoluminescence characteristics of annealed GaInNAs/GaAs quantum well /$rNg Tien Khee, Yoon Soon Fatt and Fan Weijun -- $tCrystal growth and electrical characterization of InSbN grown by metalorganic vapor phase epitaxy /$rT. Ishiguro, Y. Kobori, Y. Nagawa, Y. Iwamura and S. Yamaguchi -- $tDefects and surfactant action of antimony on GaAs and GaAs[subscript 1-x]N[subscript x] on GaAs [100] by molecular beam epitaxy /$rW. K. Cheah, W. J. Fan, S. F. Yoon, S. Wicaksono, R. Liu and A. T. S. Wee -- $tAcceptors in undoped gallium antimonide /$rM. K. Lui, C. C. Ling, X. D. Chen, K. W. Cheah and K. F. Li -- $tUndoped gallium antimonide studied by positron annihilation spectroscopy /$rS. K. Ma, C. C. Ling, H. M. Weng and D. S. Hang -- $tThe influence of GaSb layer thickness on the band gap of InAs/GaSb type-II superlattices for mid-infrared detection /$rHeather J. Haugan, Frank Szmulowicz and Gail J. Brown -- $tHVPE-based orientation-patterned GaAs : added-value for non-linear applications /$rD. Faye, E. Lallier, A. Grisard, B. Gerard and E. Gil-Lafon -- $tSubmicrometer scale growth morphology control for the making of photonic crystal structures /$rE. Gil-Lafon, A. Trassoudaine, D. Castelluci, A. Pimpinelli, R. Saoudi, O. Parriaux, A. Muravaud and C. Darraud -- $tBeam induced lateral epitaxy : a new way to lateral growth in molecular beam epitaxy /$rShegeya Naritsuka, Koji Saitoh, Takashi Suzuki and Takahiro Maruyama -- $tA study of anion exchange reactions at GaAs surfaces for heterojunction interface control /$rMaria Losurdo, Danilo Giuva, Pio Capezzuto, Giovanni Bruno, Terence Brown, Greg Triplett, Gary May and April S. Brown -- $tDefect engineering and atomic relocation processes in impurity-free disordered GaAs and AlGaAs /$rP. N. K. Deenapanray, M. Krispin, W. E. Meyer, H. H. Tan, C. Jagadish and F. D. Auret -- $tPulsed laser deposition of Bi- and Sb-based solid solutions and multilayer structures /$rArik G. Alexanian, Hovsep N. Avetisyan, Karapet E. Avjyan, Nikolay S. Aramyan, Garegin A. Aleksanyan, Romen P. Grigoryan, Ashot M. Khachatryan and Arsham S. Yeremyan -- $tGrowth of rhombohedral B[subscript 12]P[subscript 2] thin films on 6H-Si(0001) by chemical vapor deposition /$rPeng Lu, J. H. Edgar, J. Pomeroy, M. Kuball, H. M. Meyer and T. Aselage -- $tElectronic structure of native point defects in ZnGeP[subscript 2] /$rXiaoshu Jiang, M. S. Miao and Walter R. L. Lambrecht -- $tElectrical properties of [beta]-FeSi[subscript 2]/Si hetero-diode improved by pulsed laser annealing /$rKeiichi Tsuchiya, Noboru Miura, Hironaga Matsumoto, Ryotaro Nakano and Shin-ichiro Uekusa -- $tElectrostatic force microscopy and secondary electron imaging of double stacking faults in heavily n-type 4H-SiC after oxidation /$rM. K. Mikhov, B. J. Skromme, R. Wang, C. Li and I. Bhat -- $tDeep levels in multilayer structures of Si/Si[subscript 0.8]Ge[subscript 0.2] grown by low-pressure chemical vapor deposition /$rYutaka Tokuda and Kenichi Shirai -- $tEstimates of impact ionization coefficients in superlattice-based mid-wavelength infrared avalanche photodiodes /$rC. H. Grein, K. Abu El-Rub, M. E. Flatte and H. Ehrenreich -- $tGrowth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates /$rO. Kwon, J. Boeckl, M. L. Lee, A. J. Pitera, E. A. Fitzgerald and S. A. Ringel -- $tNon-contact determination of free carrier concentration in n-GaInAsSb /$rJames E. Maslar, Wilbur S. Hurst, Christine A. Wang and Daniel A. Shiau -- $tA new class of solar cells : isomeric boron carbide semiconductors with fourth quadrant conductivity /$rRavi B. Billa, A. N. Caruso and J. I. Brand -- $tInfrared dielectric properties of In[subscript 1-x]Ga[subscript x]As epilayers on InP (100) /$rN. L. Rowell, G. Yu, D. J. Lockwood and P. J. Poole -- $tMOCVD growth of InAlAsSb layer for high-breakdown voltage HEMT applications /$rHaruki Yokoyama, Hiroki Sugiyama, Yasuhiro Oda, Michio Sato, Noriyuki Watanabe and Takashi Kobayashi -- $tEvidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy /$rHoussam Chouaib, Catherine Bru-Chevallier, Taha Benyattou, Hacene Lahreche and Philippe Bove -- $tModeling of recombination lifetimes in charge-separation device structures /$rJamiyanaa Dashdorj, Richard Ahrenkiel and Wyatt Metzger -- $tObservation of retarded recombination in charge-separation structures /$rR. K. Ahrenkiel, D. Friedman, W. K. Metzger, M. Page and J. Dashdorj -- $tPump wavelength tuning of optical pumping injection cavity lasers for enhancing mid-infrared operation /$rTodd C. McAlpine, Katherine R. Greene, Michael R. Santilli, Linda J. Olafsen, William W. Bewley, Christopher L. Felix, Igor Vurgaftman, Jerry R. Meyer, M. J. Yang, Hao Lee and Ramon U. Martinelli -- $tFeature size and density effects in wet selective etching of GaAs/AlAs p-HEMT structures with organic acid-peroxide solutions /$rVinay S. Kulkarni, Kanti Prasad, William Quinn, Frank Spooner and Changmo Sung -- $t3C-SiC modulator for high-speed integrated photonics /$rCarlos Angulo Barrios, Christopher Ian Thomas, Michael Spencer and Michal Lipson -- $tElevated temperature characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy /$rZhang Rong, Yoon Soon Fatt, Tan Kianhua, Sun Zhongzhe and Huang Qingfeng -- $tFabrication of side-illuminated p-i-n photodiode with waveguide layers /$rByungok Jeon, Seungkee Yang, Hwayoung Kang and Doyoung Rhee -- $tCharacterization of bulk crystals of transition metal doped ZnO for spintronic applications /$rM. H. Kane, R. Varatharajan, Z. C. Feng, S. Kandoor, J. Nause, C. Summers and I. T. Ferguson -- $tOptical properties of bulk and epitaxial ZnO for waveguide applications /$rS. Ganesan, Z. C. Feng, D. Mehta, S. Kandoor, E. J. Womyo, J. Nause and I. Ferguson -- $tCharacterization of zinc oxide single crystals for epitaxial wafer applications /$rNaoki Ohashi, Takeshi Ohgaki, Shigeaki Sugimura, Katsumi Maeda, Isao Sakaguchi, Haruki Ryoken, Ikuo Niikura, Mitsuru Sato and Hajime Haneda -- $tDetermination of the nitrogen acceptor ionization energy in zinc oxide by photoluminescence spectroscopy /$rLijun Wang, N. Y. Garces, L. E. Halliburton and N. C. Giles -- $tSpin-dependent optical processes in II-VI diluted magnetic semiconductor nanostructures /$rYasuo Oka, Kentaro Kayanuma, Mio Sakuma, Ayahito Uetake, Izuru Souma, Zhanghai Chen and Akihiro Murayama -- $tMixing rocksalt and wurtzite structure binary nitrides to form novel ternary alloys : SeGaN and MnGaN /$rCostel Constantin, Hamad Al-Brithen, Muhammad B. Haider, David Ingram and Arthur R. Smith -- $tWide bandgap materials for semiconductor spintronics /$rS. J. Pearton, C. R. Abernathy, G. T. Thaler, R. Frazier, D. P. Norton, J. Kelly, R. Rairigh, A. F. Hebard, Y. D. Park and J. M. Zavada -- $tCdZnSe/Zn(Be)Se quantum dot structures : size, chemical composition and phonons /$rY. Gu, Igor L. Kuskovsky, J. Fung, R. Robinson, I. P. Herman, G. F. Neumark, X. Zhou, S. P. Guo and M. C. Tamargo -- $tRoom-temperature defect tolerance of shape engineered quantum dot structures /$rMatthew Lamberti, Alex Katsnelson, Michael Yakimov, Gabriel Agnello, Vadim Tokranov and Serge Oktyabrsky --
650 0 $aCompound semiconductors$xDesign and construction$vCongresses.
650 0 $aElectrooptics$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008102952
700 1 $aFriedman, Daniel J.$0http://id.loc.gov/authorities/names/n90633645
710 2 $aMaterials Research Society.$bFall Meeting$d(2003 :$cBoston, Mass.)
711 2 $aSymposium on Progress in Compound Semiconductor Materials--Electronic and Optoelectronic Applications$n(3rd :$d2003 :$cBoston, Mass.)
830 0 $aMaterials Research Society symposia proceedings ;$vv. 799.$0http://id.loc.gov/authorities/names/n42037756
852 00 $boff,eng$hTK7871.99.C65$iP76 2003g