MARC Record from marc_columbia

LEADER: 14859cam a2200337Ia 4500
001 5439014
005 20221110034740.0
008 050427t20052005paua b 101 0 eng d
020 $a1558997776
035 $a(OCoLC)ocm59714962
035 $a(NNC)5439014
035 $a5439014
040 $aLHL$cLHL$dOCL$dIXA$dOrLoB-B
090 $aTK7871.99.C65$bP76 2004
245 00 $aProgress in compound semiconductor materials IV--electronic and optoelectronic applications :$bsymposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A. /$ceditors: Gail J. Brown [and others].
260 $aWarrendale, Pa. :$bMaterials Research Society,$c[2005], ©2005.
300 $axv, 537 pages :$billustrations ;$c24 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
490 1 $aMaterials Research Society symposium proceedings ;$vvol. 829
505 00 $tAtomic force microscopy and spectroscopy of self-assembled InAsSb quantum dots grown on InP substrates by MOCVD /$rYongkun Sin, Hyun I. Kim, Gary W. Stupian and Yueming Qiu -- $tQuantum-dot molecules for potential applications in terahertz devices /$rValeria Gabriela Stoleru, Elias Towe, Chaoying Ni and Debdas Pal -- $tIntersubband transitions in In[subscript 0.3]Ga[subscript 0.7]As/GaAs multiple quantum dots of varying dot-sizes /$rY. C. Chua, Jie Liang, B. S. Passmore, E. A. DeCuir, M. O. Manasreh, Zhiming Wang and G. J. Salamo -- $t(110) InAs quantum dots : growth, single-dot luminescence and cleaved edge alignment /$rD. Wasserman, E. A. Shaner, S. A. Lyon, M. Hadjipanayi, A. C. Maciel and J. F. Ryan -- $tThe definition of multiple bandgaps in quantum-dot material by intermixing /$rA. Catrina Bryce, John H. Marsh, Dan A. Yanson, Olek P. Kowalski and Shin-Sung Kim -- $tOptical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots /$rF. Marabelli, A. Rastelli, O. G. Schmidt, G. Beaurin, M. Geddo and G. Guizzetti -- $tVirtual fabrication of small Ga-As/P and In-As/P clusters with pre-designed electronic pattern structure /$rLiudmila A. Pozhar, Alan T. Yeates, Frank Szmulowicz and William C. Mitchel -- $tThermal stability of InGaAs quantum dots under large temperature transients /$rR. Rangarajan, V. C. Elarde and J. J. Coleman -- $tStructural and optical effects of capping layer material and growth rate on the properties of self-assembled InAs quantum dot structures /$rGabriel Agnello, Vadim Tokranov, Michael Yakimov, Matthew Lamberti, Yuegui Zheng and Serge Oktyabrsky -- $tVertical and in-plane electrical transport in InAs/InP semiconductor nanostructures /$rK. O. Vicaro, J. R. R. Bortoleto, H. R. Gutierrez, L. Nieto, A. A. G. von Zuben, A. C. Seabra, P. A. Schulz and M. A. Cotta -- $tStructural investigation of InAs/InGaAs/Inp nanostructures : origin and stability of nanowires /$rL. Nieto, H. R. Gutierrez, J. R. R. Bortoleto, R. Magalhaes-Paniago and M. A. Cotta -- $tElectric field enhancement of dark current generation in detectors /$rJames P. Lavine -- $tLongitudinal modes in InAlGaAs/AlGaAs high-power laser diodes /$rB. S. Passmore, Y. C. Chua, M. O. Manasreh and J. W. Tomm -- $tHeterostructures with strained InGaAs quantum wells for RCE photodiode applications in the 1.8-2 [mu]m spectral range /$rJadwiga Zynek, Agata Jasik, Jaroslaw Gaca, Marek Wojcik, Wlodzimierz Strupinski, Jaroslaw Rutkowski, Artur Wnuk and Krzysztof Klima -- $tGood temperature performances of 870 nm resonant cavity light emitting diode (RCLED) /$rLih-Wen Laih, Yi-Hao Wu, Li-Hong Laih, Rong-Moo Hong, Hao-Chung Guo, Jung-Lung Yu, Yu-Hsiang Huang, Yi-An Chang, Ren-Jiun Chang, Chun-Hui Yang and I-Tsung Wu -- $tElectrical measurement of recombination lifetime in blue light emitting diodes /$rM. A. Awaah, R. Nana and K. Das -- $tApplication of low temperature InP wafer bonding towards optical add/drop multiplexer realization /$rJ. Arokiaraj, S. Vicknesh and A. Ramam -- $tShort-period strain-balanced GaAs[subscript 1-x]N[subscript x]/InAs(N) superlattices lattice-matched to InP(001) : a new material for 0.4-0.6 eV mid IR applications /$rL. Bhusal, A. Alemu and A. Freundlich -- $tThe Er[superscript 3+] and Yb[superscript 3+]-related emission from Er,Yb co-implanted Al[subscript 0.70]Ga[subscript 0.30]As/GaAs substrates prepared by MOCVD method /$rTomoyuki Arai and Shin-ichiro Uekusa -- $tAnnealing effects of ZnO nanorods on DC inorganic electroluminescent device characteristics /$rShinya Sasaki, Hiroshi Miyashita, Takashi Kimpara, Tomomasa Satoh and Takashi Hirate -- $tZinc oxide nanocluster formation by low energy ion implantation /$rI. Muntele, P. Thevenard, C. Muntele, B. Chhay and D. Ila -- $tFabrication of ZnO coasted ZnS:Mn[superscript 2+] nanoparticles /$rShinji Ishizaki, Yusuke Kusakari and Masakazu Kobayashi -- $tDefect structures in undoped and doped ZnO films studied by solid state diffusion /$rHaruki Ryoken, Isao Sakaguchi, Takeshi Ohgaki, Naoki Ohashi, Yutaka Adachi and Hajime Haneda -- $tElectrical properties of ZnO thin films deposited by pulsed laser deposition /$rS. P. Heluani, G. Simonelli, M. Villafuerte, G. Juarez, A. Tirpak, G. Braunstein and F. Vignolo -- $tGrowth and characterization of ZnO nanonail /$rH. W. Seo, D. Wang, Y. Tzeng, N. Sathitsuksanoh, C. C. Tin, M. J. Bozack, J. R. Williams and M. Park -- $tSynthesis and characterization of ZnO nanoparticles /$rI. U. Abhulimen, X. B. Chen, J. L. Morrison, V. K. Rangari, L. Bergman and K. Das -- $tRaman spectroscopy of V and Co doped ZnO ceramics and thin films /$rK. Samanta, N. Awasthi, B. Sundarakannan, P. Bhattacharya and R. S. Katiyar -- $tIntersubband transitions in GaN/Al[subscript x]Ga[subscript 1-x]N multi quantum wells /$rE. A. DeCuir, Jr., Y. C. Chua, B. S. Passmore, J. Liang, M. O. Manasreh, J. Xie, H. Morkoc, A. Asghar, I. T. Ferguson and A. Payne -- $tElectrical and dielectric behavior of Pb(Mg[subscript 1/4]Ni[subscript 1/4]W[subscript 1/2])O[subscript 3] ceramics /$rAdolfo Franco, Jr. -- $tPreparation and luminescent properties of SrS:Ce by addition of sulphur as a co-activator in SrSO[subscript 4]:Ce(SO[subscript 4])[subscript 2].4H[subscript 2]O by carbothermal reduction /$rP. Thiyagarajan, M. Kottaisamy, K. Sethupathi and M. S. R. Rao -- $tInAs quantum dots for optoelectronic device applications /$rK. Stewart, S. Barik, M. Buda, H. H. Tan and C. Jagadish -- $tSuperfluorescence of ion beam synthesized dense-packed embedded CdSe nanoclusters /$rH. Karl, I. Grosshans, P. Huber and B. Stritzker -- $tSynthesis of highly photoluminescent CdTe nanocrystals and their incorporation into glass matrices /$rNorio Murase and Chunliang Li -- $tThe general synthesis of nanostructured V/VI semiconductors /$rPaul Christian and Paul O'Brien -- $tUltrashort pulse generation with semiconductor modelocked lasers using saturable absorbers based on intersubband transitions in GaN/AlGaN quantum wells /$rFaisal R. Ahmad, Paul George, Jahan Dawlaty, Fahan Rana and William J. Shaff -- $tSpectroscopic analysis of external stresses in semiconductor quantum-well materials /$rJens W. Tomm, Mark L. Biermann, B. S. Passmore, M. O. Manasreh, A. Gerhardt and Tran Q. Tien -- $tProcessing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures /$rS. Golka, M. Austerer, C. Pflugl, W. Schrenk and G. Strasser -- $tZener tunneling of light in an optical superlattice /$rMher Ghulinyan, Zeno Gaburro, Lorenzo Pavesi, Claudio J. Oton, Costanza Toninelli and Diederik S. Wiersma -- $tDispersion engineering of three-dimensional silicon photonic crystals : fabrication and applications /$rSriram Venkataraman, Garrett Schneider, Janusz Murakowski, Shouyan Shi and Dennis W. Prather -- $tCorrelation between photoreflectance spectra and electrical characteristics of InP/GaAsSb double heterojunction bipolar transistors /$rHiroki Sugiyama, Yasuhiro Oda, Haruki Yokoyama, Takashi Kobayashi, Masahiro Uchida and Noriyuki Watanabe -- $tRoughness analysis of episurfaces grown on ion-beam processed GaSb substrates /$rK. Krishnaswami, D. B. Fenner, S. R. Vangala, C. Santeufemio, M. Grzesik, L. P. Allen, G. Dallas and W. D. Goodhue -- $tImproved performance of GaSb-based MIR photodetectors through electrochemical passivation in sulphur containing solutions /$rA. Piotrowska, E. Papis, K. Golaszewska, R. Lukasiewicz, E. Kaminska, T. T. Piotrowski, R. Kruszka, A. Kudla, J. Rutkowski, J. Szade, A. Winiarski, A. Wawro and M. Aleszkiewicz -- $tHigh speed Ge photodetectors on Si platform for GHz optical communications in C+L bands /$rJifeng Liu, Jurgen Michel, Douglas D. Cannon, Wojciech Giziewicz, D. Pan, David T. Danielson, Samerkhae Jongthammanurak, John Yasaitis, Kazumi Wada, Clifton G. Fonstad and Lionel C. Kimerling -- $tHigh quality MPCVD epitaxial diamond film for power device application /$rJie Yang, Weixiao Huang, T. P. Chow and James E. Butler -- $tProspect for III-nitride heterojunction MOSFET structures and devices /$rM. A. L. Johnson, D. W. Barlage and Dave Braddock --
500 $a"Symposium B, 'Progress in Compound Semiconductor Materials IV--Electronic and Optoelectronic Applications,' [was] held November 29-December 3 at the 2004 MRS Fall Meeting in Boston, Massachusetts."--p.. xv.
504 $aIncludes bibliographical references and indexes.
505 80 $tFirst-principles calculation of electron mobilities in ultrathin SOI MOSFETs /$rMatthew H. Evans, Xiaoguang Zhang, John D. Joannopoulos and Sokrates T. Pantelides -- $tNickel silicide work function tuning study in metal-gate CMOS applications /$rJun Yuan, Grant Z. Pan, Yu-Lin Chao and Jason C. S. Woo -- $tMetal-oxide semiconductor field-effect transistors using single ZnO nanowire /$rYoung-Woo Heo, B. S. Kang, L. C. Tien, Y. Kwon, J. R. La Roche, B. P. Gila, F. Ren, S. J. Pearton and D. P. Norton -- $tPreparation of ultraviolet light emitting ZnO nanoparticles via a novel synthesis route /$rYuntao Li, Richard D. Yang, S. Tripathy, H.-J. Sue, N. Miyatake and R. Nishimura -- $tZnO spintronics and nanowire devices /$rDavid P. Norton, Young-Woo Heo, L. C. Tien, M. P. Ivill, Y. Li, B. S. Kang, Fan Ren, J. Kelly, A. F. Hebard and Stephen Pearton -- $tElectrical and optical properties of n-type and p-type ZnO /$rD. C. Look and B. Claflin -- $tTowards p-type doping of ZnO by ion implantation /$rV. A. Coleman, H. H. Tan, C. Jagadish, S. O. Kucheyev, M. R. Phillips and J. Zou -- $tNew routes to metal chalcogenide nanostructures /$rPaul Christian and Paul O'Brien -- $tProperties of gallium selenide doped with sulfur /$rValeriy G. Voevodin, Svetlana A. Bereznaya, Zoya V. Korotchenko, Aleksandr N. Morozov, Sergey Yu. Sarkisov, Nils C. Fernelius and Jonathan T. Goldstein -- $tNominal PbSe nano-islands on PbTe : grown by MBE, analyzed by AFM and TEM /$rPeter Moeck, Mukes Kapilashrami, Arvind Rao, Kirill Aldushin, Jeahuck Lee, James E. Morris, Nigel D. Browning and Patrick J. McCann -- $tOptical properties of CdSe and CdTe nanoparticles embedded in SiO[subscript 2] films /$rP. Babu Dayal, B. R. Mehta and P. D. Paulson -- $tNew electroluminescence spectrum from co-doped ZnS:(Mn,Si) films prepared by chemical vapor deposition with laser ablation /$rMakoto Ozawa, Tomomasa Satoh and Takashi Hirate -- $tComposition dependence of the Judd-Ofelt intensity parameters in TeO[subscript 2]-PbF[subscript 2] : Tm[superscript 3+] glasses /$rIdris Kabalci, Gonul Ozen, Adnan Kurt and Alphan Sennaroglu -- $tGrowth and crystal structure of Alq3 single crystals : a new structure showing [pi]-[pi] and CH-[pi] interactions /$rAli N. Rashid and Donald C. Craig -- $tPreparation of carbon nano-materials using arc discharge in liquid /$rY. Suda, H. Kawasaki, T. Ohshima, S. Nakashima, S. Kawazoe and T. Toma -- $tDopant activation in bulk germanium and germanium-on-insulator /$rY.-L. Chao, S. Prussin, J. C. S. Woo and R. Scholz -- $tElectronic and optical properties of SiGe alloys within first-principles schemes /$rG. Cappellini, G. Satta, M. Palummo and G. Onida -- $tAb initio calculations for the electronic spectra of cubic and hexagonal boron nitride /$rGuido Satta, Giancarlo Cappellini, Valerio Olevano and Lucia Reining -- $tTransport properties of polycrystalline SiGe thin films grown on SiO[subscript 2] /$rMinoru Mitsui, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano and Yasuhiro Shiraki -- $tStudy of germanium diffusion in HfO[subscript 2] gate dielectric of MOS device application /$rQingchun Zhang, Nan Wu, L. K. Bera and Chunxiang Zhu -- $tSite-specific formation of nanoporous silicon on micro-fabricated silicon surfaces /$rFung Suong Ou, Laxmikant V. Saraf and Donald R. Baer -- $tBeam induced lateral epitaxy of GaAs on a GaAs/Si template /$rShigeya Naritsuka, Koji Saitoh, Toshiyuki Kondo and Takahiro Maruyama -- $tNovel noncontact thickness metrology for partially transparent and nontransparent wafers for backend semiconductor manufacturing /$rWojciech J. Walecki, Vitali Souchkov, Kevin Lai, Phuc Van, Manuel Santos, Alexander Pravdivtsev, S. H. Lau and Ann Koo -- $tDielectric properties of semiconductors by TDDFT in real-space and real-time approach /$rYasunari Zempo and Nobuhiko Akino -- $tPt/Au and W/Pt/Au Schottky contacts to bulk n-ZnO /$rKelly Ip, Brent Gila, Andrea Onstine, Eric Lambers, Young-Woo Heo, David Norton, Stephen Pearton, Jeffrey LaRoche and Fan Ren -- $tPreparation of SrS:Ce/ZnO core-shell nanoparticles using reverse micelle method /$rYusuke Kusakari, Shinji Ishizaki and Masakazu Kobayashi -- $tZnO/GaN heteroepitaxy /$rK. W. Jang, D. C. Oh, T. Minegishi, H. Suzuki, T. Hanada, H. Makino, M. W. Cho and T. Yao -- $tNear band-edge and excitonic behavior of GaAsN epilayers grown by chemical beam epitaxy /$rJ. A. H. Coaquira, L. Bhusal, W. Zhu, A. Fotkatzikis, M.-A. Pinault, A. P. Litvinchuk and A. Freundlich -- $tCharge coupled cyclotron motion of electrons and holes in InGaAsN epitaxial layers /$rH. E. Porteanu, O. Loginenko, F. Koch, G. Dumitras, L. Geelhaar and H. Riechert -- $tNitrogen induced optical phonon shift in GaN[subscript y]As[subscript 1-y] studied by Raman scattering /$rLi-Lin Tay, David J. Lockwood and James A. Gupta -- $tMBE-grown GaNAsBi matched to GaAs with 1.3-[mu]m emission wavelength /$rMasahiro Yoshimoto, Wei Huang and Kunishige Oe.
650 0 $aCompound semiconductors$xDesign and construction$vCongresses.
650 0 $aElectrooptics$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008102952
700 1 $aFriedman, Daniel J.$q(Daniel Joseph)$0http://id.loc.gov/authorities/names/no2004073344
710 2 $aMaterials Research Society.$bFall Meeting$d(2003 :$cBoston, Mass.)
711 2 $aSymposium on Progress in Compound Semiconductor Materials--Electronic and Optoelectronic Applications$n(4th :$d2004 :$cBoston, Mass.)
830 0 $aMaterials Research Society symposia proceedings ;$vv. 829.$0http://id.loc.gov/authorities/names/n42037756
852 00 $boff,eng$hTK7871.99.C65$iP76 2004g