| Record ID | marc_columbia/Columbia-extract-20221130-012.mrc:28772185:1170 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-012.mrc:28772185:1170?format=raw |
LEADER: 01170cam a22003134a 4500
001 5535115
005 20221121181827.0
008 051226s2005 flua b 001 0 eng
010 $a 2005041376
020 $a0849335590 (alk. paper)
035 $a(OCoLC)57893627
035 $a(OCoLC)ocm57893627
035 $a(DLC) 2005041376
035 $a(NNC)5535115
035 $a5535115
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aTK7871.96.B55$bS55 2005
082 00 $a621.3815/28$222
245 00 $aSilicon heterostructure handbook :$bmaterials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy /$cedited byJohn D. Cressler.
260 $aBoca Raton, FL :$bCRC Taylor & Francis,$c2006.
300 $a1 volume (various pagings) :$billustrations ;$c26 cm
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
504 $aIncludes bibliographical references and index.
650 0 $aBipolar transistors$vHandbooks, manuals, etc.
650 0 $aSilicon$vHandbooks, manuals, etc.
700 1 $aCressler, John D.$0http://id.loc.gov/authorities/names/n2002162201
852 00 $boff,eng$hTK7871.96.B55$iS55 2005