MARC Record from marc_columbia

LEADER: 09798cam a2200409Ia 4500
001 6168625
005 20221122002344.0
008 070430t20072007paua b 101 0 eng d
020 $a9781558999152
020 $a1558999159
035 $a(OCoLC)ocn123894506
035 $a(OCoLC)123894506
035 $a(NNC)6168625
035 $a6168625
040 $aLHL$cLHL$dOrLoB-B
090 $aTK7871.85$b.G68 2006
245 00 $aGroup-IV semiconductor nanostructures--2006 :$bsymposium held November 27-December 1, 2007, Boston, Massachusetts, U.S.A. /$ceditors, Leonid Tsybeskov [and others].
260 $aWarrendale, Pa. :$bMaterials Research Society,$c[2007], ©2007.
300 $axi, 311 pages :$billustrations ;$c24 cm.
336 $atext$btxt$2rdacontent
337 $aunmediated$bn$2rdamedia
490 1 $aMaterials Research Society symposium proceedings ;$vv. 958
500 $a"The papers published in this volume form a representative cross section of the presentations (both invited and contributed talks as well as posters) made during Symposium L, 'Group IV Semiconductor Nanostructures," held November 27-December 1 at the 2006 MRS Fall Meeting in Boston, Massachusetts."--Pref.
504 $aIncludes bibliographical references and indexes.
505 00 $tLight emission and photonic devices --$tEpitaxial growth and luminescence characterization of si-based double heterostructures light-emitting diodes with iron disilicide active region /$rTakashi Suemasu, Cheng Li, Tsuyoshi Sunohara, Yuta Ugajin, Ken'ichi Kobayashi, Shigemitsu Murase and Fumio Hasegawa --$tAdvances in SiGeSn/Ge technology /$rRichard Soref, John Kouvetakis and Jose Menendez --$tSilicon photonic devices and polarization independence /$rGraham T. Reed, Goran Z. Mashanovich, Branislav D. Timotijevic, Frederic Y. Gardes, William R. Headley and Nicholas Wright --$tMulti-mode mid-IR silicon Raman amplifiers /$rBahram Jalali, Varun Raghunathan and Robert R. Rice --$tOptical properties of multiple, delta-doped Si:B/Si layers /$rHan-Yun Chang, Eun-Kyu Lee, Boris V. Kamenev, Jean-Marc Baribeau, David J. Lockwood and Leonid Tsybeskov --$tGe, SiGe, diamond nanostructures --$tSpin relaxation in SiGe islands /$rHans Malissa, Wolfgang Jantsch, Gang Chen, Herbert Lichtenberger, Thomas Fromherz, Friedrich Schaffler, Gunther Bauer, Alexei Tyryshkin, Stephen Lyon and Zbyslaw Wilamowski --$tPhotoluminescence excitation dependence in three-dimensional Si/SiGe Nanostructures /$rEun-Kyu Lee, Boris V. Kamenev, Theodore I. Kamins, Jean-Marc Baribeau, David J. Lockwood and Leonid Tsybeskov --$tGe/Si self-assembled islands for photonics applications /$rPhilippe Boucaud, Moustafa El Kurdi, Xiang Li, Sebastien Sauvage, Xavier Checoury, Sylvain David, Navy Yam, Frederic Fossard, Daniel Bouchier and Guy Fishman --$tOrdering and shape tuning of Ge islands on metal-patterned Si /$rJeremy T. Robinson, Yifan Cao, Donald Walko, Dohn Anns, J., Alexander Liddle and Oscar D. Dubon --$tPhoto-oxidation of Ge nanocrystals : kinetic measurements by in situ Raman spectroscopy /$rI. D. Sharp, Q. Xu, C. W. Yuan, J. W. Beeman, J. W. Ager, D. C. Chrzan and E. E. Haller --$tLuminescence in multilayers of SiGe nanocrystals embedded in SiO[subscript 2] /$rManuel Avella, Angel Carmelo Prieto, Juan Jimenez, Andres Rodriguez, Jesus Sangrador, Tomas Rodriguez, Maria Isabel Ortiz, Carmen Ballesteros and Andreas Kling --$tOptical properties of Si and Ge/Si nanocrystals in silicon oxide matrix /$rShin-ichiro Uekusa and Atsuhiko Kushida --$tStructural and optical properties of Al[subscript 2]O[subscript 3] with Si and Ge nanocrystals /$rSelcuk Yerci, Ilker Yildiz, Ayse Seyhan, Mustafa Kulakci, Ugur Serincan, Michael Shandalov, Yuval Golan and Rasit Turan --$tGas cluster Ge infusion for Si[subscript (l-x)]Ge[subscript (x)] strained-layer applications /$rThomas G. Tetreault, Yan Shao, Mengbing Huang and John Hautala --$tCharacterization of coherent Si[subscript 1-x]Ge[subscript x] island superlattices on (100) Si /$rJean-Marc Baribeau, Xiaohua Wu, Marie-Josee Picard and David J. Lockwood --$tDMC study of the optoelectronic properties of diamondoids /$rNeil Drummond, Andrew Williamson, Richard Needs and Giulia Galli --$tStrains, Si/Ge films and layers --$tPiezoresistance in strained silicon and strained silicon germanium /$rJ. Richter, M. B. Arnoldus, J. Lundsgaard Hansen, A. Nylandsted Larsen, O. Hansen and E. V. Thomsen --$tStrained Si-based nanomembrane materials /$rShelley A. Scott, Michelle M. Roberts, Donald E. Savage and Max G. Lagally --$tReliable local strain characterization on Si/SiGe structures in biaxial tension /$rWenjun Zhao, Gerd Duscher, Mohammed A. Zikry and George Rozgonyi --$tNucleation process during excimer laser annealing of amorphous silicon thin films on glass : a molecular- dynamics study /$rShinji Munetoh, Takanori Mitani, Takahide Kuranaga and Teruaki Motooka --$tLaser crystallization of silicon thin films using photo absorption layer formed by spin coating of carbon particles /$rNobuyuki Andoh, Masato Maki, Toshiyuki Sameshima and Naoki Sano --$tTheoretical study of Si-rich transition-metal silicides with double-graphene-like structures /$rTakehide Miyazaki and Toshihiko Kanayama --$tGroup IV nanowires --$tSynthesis and optical properties of silicon oxide nanowires /$rBernard Gelloz, Yannick Coffinier, Billel Salhi, Nobuyoshi Koshida, Gilles Patriarche and Rabah Boukherroub --$tNanoscale transistors : physics and materials /$rMark S. Lundstrom, Kurtis D. Cantley and Himadri S. Pal --$tFormation of a thermally stable NiS FUSI gate electrode by a novel integration process /$rS. Y. Tan, Hsien-Chia Chiu and Chun-Yen Hu --$tTerahertz detection related to plasma excitations in nanometer gate length field effect transistor /$rW. Knap, A. El Fatimy, R. Tauk, S. Boubanga Tombet and F. Teppe --$tMechanical properties of Ge/Si core-shell nanowires under a uniaxial tension /$rY. Yano, T. Nakajima and K. Shintani --$tTime resolved photoconduction studies of uniformly doped and p-n junction Si nanowires /$rLoucas Tsakalakos, Darryl Michael, Jody Fronheiser, Joleyn Balch, Robert Wortman, Paul Wilson, David White, Rolf Boone and Stephen LeBoeuf Si Nanocrystals --$tPronounced photonic effects of high-pressure water vapor annealing on nanocrystalline porous silicon /$rBernard Gelloz, Takayuki Shibata, Romain Mentek and Nobuyoshi Koshida --$tNonlinear optical properties of Si nanocrystals /$rRita Spano, Massimo Cazzanelli, Nicola Daldosso, Zeno Gaburro, Luigi Ferraioli, Luca Tartara, Jin Yu, Vittorio Degiorgio, Sergi Hernandez, Youcef Lebour, Paolo Pellegrino, Blas Garrido, Emmanuel Jordana, Jean Marc Fedeli and Lorenzo Pavesi --$tPhotoluminescent silicon nanocrystals with mixed surface functionalization for biophotonics /$rFolarin Erogbogbo and Mark T. Swihart --$tThe role of local fields in the optical properties of silicon nanocrystals /$rFabio Trani, Domenico Ninno, Giovanni Cantele and Giuseppe Iadonisi --$tSilicon nanocrystals fabricated by a novel plasma enhanced hydrogenation technique suitable for light emitting devices /$rMehdi Jamei, Farshid Karbassian, Shams Mohajerzadeh, Yaser Abdi, Pouya Hashemi, Michael Robertson and Sandra Yuill --$tTime evolution of nano-scale morphology of silicon microstructure surfaces in the early phase of hydrogen annealing /$rReiko Hiruta, Hitoshi Kuribayashi, Ryosuke Shimizu, Koichi Sudoh and Hiroshi Iwasaki --$tBiological properties of nanocrystalline silicon particles fo biomedical applications /$rKeisuke Sato, Satoshi Yanagisawa, Akio Funakubo, Yasuhiro Fukui, Kenji Hirakuri and Tetsuya Higami --$tSOI-based silicon quantum dots contacted by self-aligned nano-electrodes /$rConrad R. Wolf, Andreas Ladenburger, Rainer Enchelmaier, Klaus Thonke and Rolf Sauer --$tEffect of surface passivation on stability of luminescence from nanocrystalline silicon particles in pure water /$rMasaki Hiruoka, Keisuke Sato and Kenji Hirakuri --$tSpectroscopic characterization of alkyl-passivated Si nanoparticles synthesized by a solution route /$rAkinori Tanaka, Tadafumi Kamikake, Masaki Imamura, Yoshiaki Murase and Hidehiro Yasuda --$tNitrogen influence on the photoluminescence properties of silicon nanocrystals /$rLuigi Ferraioli, Pierluigi Bellutti, Nicola Daldosso, Viviana Mulloni and Lorenzo Pavesi --$tNano-sized crystals of silicon embedded in silica glass : large scale models and aspects of the electronic structure 293 /$rPeter Kroll and Hendrik J. Schulte --$tUnderstanding of the synthesis and structure of Si nanocrystals in an oxide matrix from first principles based atomistic modeling /$rSangheon Lee, Decai Yu and Gyeong S. Hwang.
650 0 $aSemiconductors$xDesign and construction$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008111516
650 0 $aNanostructured materials$xDesign and construction$vCongresses.
650 0 $aPhotonics$xMaterials$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008109281
650 0 $aIntegrated circuits$xUltra large scale integration$xDesign and construction$vCongresses.
650 0 $aIntegrated circuits$xUltra large scale integration$xMaterials$vCongresses.
650 0 $aThin films$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2008112885
650 0 $aMetallic films$vCongresses.$0http://id.loc.gov/authorities/subjects/sh2010101550
711 2 $aSymposium F, "Group-IV Semiconductor Nanostructures"$d(2004 :$cBoston, Mass.)$0http://id.loc.gov/authorities/names/no2005101260
700 1 $aTsybeskov, Leonid.$0http://id.loc.gov/authorities/names/n2003001872
711 2 $aSymposium on Group IV Semiconductor Nanostructures$d(2006 :$cBoston, Mass.)
830 0 $aMaterials Research Society symposia proceedings ;$vv. 958.$0http://id.loc.gov/authorities/names/n42037756
852 00 $boff,eng$hTK7871.85$i.G68 2006g