| Record ID | marc_columbia/Columbia-extract-20221130-019.mrc:3177904:1379 |
| Source | marc_columbia |
| Download Link | /show-records/marc_columbia/Columbia-extract-20221130-019.mrc:3177904:1379?format=raw |
LEADER: 01379cam a2200337 a 4500
001 9008880
005 20111026000327.0
008 100108s2011 nyua b 001 0 eng
010 $a 2009052387
020 $a9780195170153
020 $a0195170156
035 $a(OCoLC)ocn149091992
035 $a(NNC)9008880
040 $aDLC$cDLC$dYDX$dBTCTA$dBAKER$dYDXCP$dCDX
050 00 $aTK7871.99.M44$bT77 2011
082 00 $a621.3815/284$222
100 1 $aTsividis, Yannis.
245 10 $aOperation and modeling of the MOS transistor /$cYannis Tsividis, Colin McAndrew.
246 30 $aMOS transistor
250 $a3rd ed.
260 $aNew York :$bOxford University Press,$c2011.
300 $axxiv, 723 p. :$bill. ;$c25 cm.
504 $aIncludes bibliographical references and index.
650 0 $aMetal oxide semiconductors$xMathematical models.
650 0 $aMetal oxide semiconductor field-effect transistors$xMathematical models.
700 1 $aMcAndrew, Colin.
856 41 $3Table of contents only$uhttp://catdir.loc.gov/catdir/enhancements/fy1108/2009052387-t.html
856 42 $3Publisher description$uhttp://catdir.loc.gov/catdir/enhancements/fy1108/2009052387-d.html
856 42 $3Contributor biographical information$uhttp://catdir.loc.gov/catdir/enhancements/fy1108/2009052387-b.html
852 00 $boff,eng$hTK7871.99.M44$iT77 2011
852 00 $bsci$hTK7871.99.M44$iT77 2011