Record ID | marc_columbia/Columbia-extract-20221130-031.mrc:166215931:8590 |
Source | marc_columbia |
Download Link | /show-records/marc_columbia/Columbia-extract-20221130-031.mrc:166215931:8590?format=raw |
LEADER: 08590cam a2200649 a 4500
001 15104485
005 20221126231132.0
006 m o d
007 cr |n|||||||||
008 090929s2010 flua ob 001 0 eng d
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035 $a(NNC)15104485
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020 $a1322622590$q(electronic bk.)
020 $a9781322622590$q(electronic bk.)
020 $a9781420087086$q(electronic bk.)
020 $a1420087088$q(electronic bk.)
020 $z9781420087079$q(hardcover ;$qalk. paper)
020 $z142008707X$q(hardcover ;$qalk. paper)
035 $a(OCoLC)901264403$z(OCoLC)944007642$z(OCoLC)1066419446$z(OCoLC)1129365478$z(OCoLC)1228578381
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100 1 $aSabah, Nassir H.
245 10 $aElectronics :$bbasic, analog, and digital with PSpice /$cNassir H. Sabah.
260 $aBoca Raton :$bCRC Press/Taylor & Francis,$c©2010.
300 $a1 online resource (xxxiii, 729 pages) :$billustrations
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
504 $aIncludes bibliographical references and index.
588 0 $aPrint version record.
505 0 $aPreface; Foreword: Brief History and Impact of Electronics Convention for Symbols Basic Diode Circuits; Overview; Learning Objectives; Ideal and Practical Diodes; Ideal Diode; Ideal Si pn Junction Diode; Practical Diodes; Incremental Diode Resistance; Basic Analysis of Diode Circuits; Piecewise Linear Approximation; Bias Point; Small-Signal Model; Rectifier Circuits; Half-Wave Rectifier; Full-Wave Rectifier; Smoothing of Output; Capacitor-Input Filter; Approximate Analysis of Capacitor-Input Filter; Zener Voltage Regulator; Voltage-Current Characteristic; Analysis of Zener Regulator; Load regulation and Line Regulation; Diode Voltage Limiters; Surge Protection; Diode-Capacitor Circuits; dc Restorer; Voltage Multiplication; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and
505 0 $aTopics on CD; Problems and Exercises Basic Principles of Semiconductors; Excerpts from Wave Mechanics; Some Basic Ideas; Schrödinger's Equation; Wave Packets; Free Atoms; Energy Band Structure; Electric Conduction in Semiconductors; Electrons in a Periodic Potential; Effective Mass; Hole Conduction; Density of Electron States; Fermi-Dirac Distribution; Intrinsic and Extrinsic Semiconductors; Crystal Structure; Intrinsic Semiconductor; Extrinsic Semiconductors; Electrochemical Potential; Expression for Chemical Potential; Expression for Electrochemical Potential; Generalized Ohm's Law; State of Equilibrium; Fermi Level and Electrochemical Potential; Carrier Concentrations in Semiconductors; Carrier Generation and Recombination; Intrinsic Semiconductor; Position of Fermi Level; n-type Semiconductor; p-type semiconductor
505 0 $a; Carrier Mobility ; Variation with Dopant Concentration; Variation with Temperature; Carrier Recombination; Minority Carrier Lifetime; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and Topics on CD; Problems and Exercises pn Junction and Semiconductor Diodes; The pn Junction at Equilibrium; Junction Potential; Depletion Approximation; The Biased pn Junction; The pn Junction as a Rectifier; Width of Depletion Region; Charge Distributions and Currents under Bias; Current-Voltage relation; Charge-Current Relation; pn Junction Capacitances; Temperature Effects; Junction Breakdown; Semiconductor Photoelectric Devices; Photoconductive Cell; Photodiode; Photocell; Light-Emitting Diodes; Tunnel Diode; Contacts between Dissimilar Materials; Metal-Metal Contacts
505 0 $a; Metal-Semiconductor Contacts; Schottky Diode; Heterojunction; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and Topics on CD; Problems and Exercises Semiconductor Fabrication; Preparation of Silicon Wafer; High-Purity Silicon; Crystal Growth; Wafer Production; Oxidation; Patterning Processes; Preparation of Masks; Lithography; Etching; Deposition Processes; Ion Implantation; Diffusion; Chemical Vapor Deposition; Metallization; Clean Room Environment; Packaging; Types of Packages; Fabrication of Simple Devices; Resistors; pn Junction Diodes; Capacitors; CMOS Fabrication; Transistor Isolation; Transistor Formation; Silicon-on Insulator Technology; Fabrication of Bipolar Junction Transistors; Basic BJT Structure; Modified BJT Structures; BiCMOS
505 0 $a; Miscellaneous Topics; SiGe Technology; Crystal Defects; Si-SiO2 Interface; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and Topics on CD; Problems and Exercises Field Effect Transistors; Amplifiers; Hypothetical Amplifying Device; Basic Operation of the MOSFET; Structure; Operation of Enhancement-type MOSFET; Current-Voltage Relations; p-Channel MOS Transistor; Small-Signal Operation; Secondary Effects in MOSFETs; Channel-Length Modulation; Transconductance; Overdrive Voltage; Temperature Effects; Breakdown; Body Effect; Capacitances; Unity-Gain Bandwidth; Short-Channel Effects; Carrier Velocity Saturation and Hot Carriers; Reduced Output Resistance and Threshold; Other Effects; Improved Performance; Depletion-Type MOSFETs; Diode Connection; Complementary MOSFETs; CMOS
505 0 $aAmplifier; CMOS Transmission Gate; CMOS Inverter; Junction Field Effect Transistor; Structure; Operation; Current-Voltage Relation; Metal-Semiconductor Field-Effect Transistor; Structure; Operation; High-Mobility Devices; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and Topics on CD; Problems and Exercises Bipolar Junction Transistor; Basic Operation of the BJT; Common-Base dc Current Gains; Typical Structure; Common-Emitter Configuration; Small-Signal Current Gains; Small-Signal Equivalent Circuits; Secondary Effects in BJTs; Base-Width Modulation; Hybrid-p Equivalent Circuit; Variation of iC with vbe; h-Parameter Equivalent Circuit; Temperature Effects; Breakdown; Punchthrough; BJT Capacitances; Unity-Gain Bandwidth; BJT Large-Signal Models; Ebers-Moll Model; Saturation Mode
505 0 $a; The BJT as a Switch; Diode Connection; Regenerative Pair; Augmented Models; Heterojunction Bipolar Transistor; Noise in Semiconductors; Comparison of BJTs and FETs ; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and Topics on CD; Problems and Exercises Two-Port Circuits, Amplifiers,
505 0 $aAnd Feedback; Two-Port Circuits; Equivalent Circuits; Ideal Amplifiers; Negative Feedback; Feedback Amplifiers; Ideal Operational Amplifier; Noninverting Configuration; Unity-Gain amplifier; Signal-Flow Diagrams; Inverting Configuration; Integrator; Differentiator; Extraneous Signals; Gain-Bandwidth Product; Summary of Main Concepts and Results; Learning Outcomes; Supplementary Examples and Topics on CD; Problems and Exercises; Single-Stage Transistor Amplifiers; Transistor Biasing; Biasing of Discrete Transistors; Current Mirror; BJT Current Mirror; MOSFET Current Mirror; Basic Amplifier Configurations; General Considerations; Common-Emitter Amplifier; Common-Source Amplifier; Common-Drain Amplifier; Common-Collector Amplifier; Common-Source Amplifier with Source Resistor; Common-Emitter Amplifier with Emitter Resistor
505 0 $a; Common-Gate Amplifier; Common-Base Amplifier; High-Frequency Response; Miller's Theorem; Poles and Zeros of Transfer Function; Common Emitter/Source Amplifier; Common Collector/Drain Amplifier; Common-Emitter/Source Amplifier with Feedback Resistor; Common-Base/Gate Amplifier; Composite Transistor Connections; Darlington Pair; Common Collector-Common Emitter Cascade
650 0 $aElectronics.
650 2 $aElectronics
650 6 $aÉlectronique.
650 7 $aTECHNOLOGY & ENGINEERING$xMechanical.$2bisacsh
650 7 $aElectronics.$2fast$0(OCoLC)fst00907538
776 08 $iPrint version:$z142008707X$w(DLC) 2009036999
856 40 $uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio15104485$zTaylor & Francis eBooks
852 8 $blweb$hEBOOKS