Record ID | marc_columbia/Columbia-extract-20221130-031.mrc:182000870:3451 |
Source | marc_columbia |
Download Link | /show-records/marc_columbia/Columbia-extract-20221130-031.mrc:182000870:3451?format=raw |
LEADER: 03451cam a2200709Ii 4500
001 15108791
005 20220528232705.0
006 m o d
007 cr cnu---unuuu
008 151217s2016 flua ob 000 0 eng d
035 $a(OCoLC)ocn932464059
035 $a(NNC)15108791
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020 $a9781482228687$q(electronic bk.)
020 $a1482228688$q(electronic bk.)
020 $a148222867X
020 $a9781482228670
020 $a9781315215341
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020 $z9781482228670
024 7 $a10.1201/b19251$2doi
035 $a(OCoLC)932464059$z(OCoLC)935251134$z(OCoLC)959872394$z(OCoLC)963742615$z(OCoLC)965143769$z(OCoLC)1066467362
037 $aTANDF_353080$bIngram Content Group
050 4 $aTK7875$b.N36 2016eb
072 7 $aTEC$x009070$2bisacsh
082 04 $a621.381$223
049 $aZCUA
245 00 $aNanoscale silicon devices /$cedited by Shunri Oda, David K. Ferry.
264 1 $aBoca Raton :$bCRC Press,$c[2016]
264 4 $c©2016
300 $a1 online resource :$bcolor illustrations
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
588 0 $aOnline resource; title from PDF title page (EBSCO, viewed December 18, 2015).
504 $aIncludes bibliographical references.
505 0 $aFront Cover; Contents; Preface; Editors; Contributors; Chapter 1: Physics of Silicon Nanodevices; Chapter 2: Tri- Gate Transistors; Chapter 3: Variability in Scaled MOSFETs; Chapter 4: Self-Heating Effects in Nanoscale 3D MOSFETs; Chapter 5: Spintronics-Based Nonvolatile Computing Systems; Chapter 6: NEMS Devices; Chapter 7: Tunnel FETs for More Energy-Efficient Computing; Chapter 8: Dopant-Atom Silicon Tunneling Nanodevices; Chapter 9: Single-Electron Transfer in Si Nanowires; Chapter 10: Coupled Si Quantum Dots for Spin-Based Qubits.
505 8 $aChapter 11: Potential of Nonvolatile Magnetoelectric Devices for Spintronic ApplicationsColor Insert; Back Cover.
650 0 $aNanoelectromechanical systems.
650 0 $aNanotechnology.
650 0 $aSilicon crystals$xElectric properties.
650 6 $aNanosystèmes électromécaniques.
650 7 $aTECHNOLOGY & ENGINEERING$xMechanical.$2bisacsh
650 7 $aNanoelectromechanical systems.$2fast$0(OCoLC)fst01741807
650 7 $aNanotechnology.$2fast$0(OCoLC)fst01032639
650 7 $aSilicon crystals$xElectric properties.$2fast$0(OCoLC)fst01118672
655 0 $aElectronic books.
655 4 $aElectronic books.
700 1 $aOda, Shunri,$eeditor.
700 1 $aFerry, David K.,$eeditor.
776 08 $iPrint version:$tNanoscale silicon devices.$dBoca Raton, Florida ; London, [England] : New York, [New York] : CRC Press, ©2016$hxii, 278 pages$z9781482228670
856 40 $uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio15108791$zTaylor & Francis eBooks
880 4 $6264-00/(Q$c©є℗♭2016
852 8 $blweb$hEBOOKS