MARC Record from marc_columbia

LEADER: 06256cam a2200649 i 4500
001 15133544
005 20220326232729.0
006 m o d
007 cr cnu|||unuuu
008 180716s2018 si ob 001 0 eng d
035 $a(OCoLC)on1044733832
035 $a(NNC)15133544
040 $aN$T$beng$erda$epn$cN$T$dN$T$dEBLCP$dMERER$dOCLCF$dOCLCQ$dS9I$dNLE$dAU@$dTYFRS$dUKAHL$dYDXIT$dOCLCQ$dZCU$dOCLCO$dOCLCQ$dOCLCO
019 $a1045558988$a1053734096
020 $a9780429225352$q(electronic book)
020 $a0429225350$q(electronic book)
020 $a9781315100425$q(electronic book)
020 $a1315100428$q(electronic book)
020 $a9781351586061$q(electronic book)
020 $a1351586068$q(electronic book)
020 $a9781351586054$q(electronic book)
020 $a135158605X$q(electronic book)
020 $z9789814774376
024 7 $a10.1201/b22346$2doi
035 $a(OCoLC)1044733832$z(OCoLC)1045558988$z(OCoLC)1053734096
037 $a9781351586054$bIngram Content Group
050 4 $aQC611.8.A5$bP67 2018
072 7 $aSCI$x021000$2bisacsh
072 7 $aSCI$x022000$2bisacsh
082 04 $a537.622$223
049 $aZCUA
100 1 $aPopov, Anatoly,$d1944-$eauthor.
245 10 $aDisordered semiconductors :$bphysics and applications /$cAnatoly Popov.
250 $aSecond edition.
264 1 $aSingapore :$bPan Stanford,$c[2018]
300 $a1 online resource
336 $atext$btxt$2rdacontent
337 $acomputer$bc$2rdamedia
338 $aonline resource$bcr$2rdacarrier
347 $adata file
505 0 $aCover; Half title; Title; Published; Contents; Preface; Preface to the First Edition; Chapter 1. Introduction; 1.1 Definition of Disordered State; 1.2 Classification of Non-crystalline Systems; 1.3 Qualitative and Quantitative Characteristics of Glass Formation; Chapter 2. Atomic Structure of Disordered Semiconductors; 2.1 Structural Characteristics of Solids; 2.2 Short-Range and Medium-Range Order; 2.3 Methods of Investigation of Disordered System Structure; 2.4 Simulation of Disordered Material Structure; 2.5 Results of Structural Research of Disordered Semiconductors
505 8 $a2.5.1 Atomic Structure of Non-crystalline Selenium2.5.2 Atomic Structure of Chalcogenide Glasses; 2.5.3 Atomic Structure of Amorphous Silicon; 2.5.4 Structure of Carbon-Based Amorphous and Nanocomposite Films; 2.5.5 Structure of Organic Semiconductors; Chapter 3. Electronic Structure and Properties of Disordered Semiconductors; 3.1 Electronic Structure; 3.1.1 Localized States in Disordered Semiconductors; 3.1.2 Models of Energy Bands; 3.1.3 Defect States in Disordered Semiconductors; 3.1.4 Electronic Structure of Hydrogenated Amorphous Silicon
505 8 $a3.1.5 Electronic Structure of Organic Semiconductors3.2 Electrical Properties of Disordered Semiconductors; 3.2.1 Electrical Conductivity; 3.2.1.1 Conductivity in extended states; 3.2.1.2 Conductivity in the tails of bands; 3.2.1.3 Conductivity in localized states at the Fermi level; 3.2.2 Thermoelectric Power; 3.2.3 Hall Effect Anomaly; 3.2.4 Time of Flight Method; 3.2.5 Features of the Charge Carrier Transport in Organic Semiconductors; 3.3 Optical Properties of Disordered Semiconductors; 3.4 Photoelectrical Properties of Disordered Semiconductors; 3.4.1 Dependence on Light Flux Intensity
505 8 $a3.4.2 Dependence on Spectral Characteristics3.4.3 Dependence on Temperature; 3.4.4 Dependence on Electric Field Intensity; Chapter 4. Methods for Controlling Properties of Disordered Semiconductors; 4.1 Doping of Hydrogenated Amorphous Silicon; 4.2 Chemical Modification of Chalcogenide Glassy Semiconductor Film Properties; 4.3 Conductivity Type Inversion in Bulk Glassy Chalcogenide; 4.4 Structural Modification of Disordered Semiconductors Properties; 4.4.1 Structural Modification at the Level of Short-Range Order; 4.4.2 Structural Modification at the Medium-Range-Order Level
505 8 $a4.4.3 Structural Modification at the Morphology/Heterogeneity Level4.4.5 Correlation between Structural Modification and Stability of Material Properties and Device Parameters; 4.4.4 Structural Modification at the Defect Subsystem Level; 4.5 Chemical Modification of the Atomic Structure of Disordered Semiconductors; 4.6 Structural, Chemical, and Phase Modification of Amorphous Diamond-Like Silicon-Carbon Films; 4.6.1 Structural Modification of ASCFs; 4.6.2 Chemical and Phase Modification of ASCF; 4.6.3 Nanostructuring of ASCF; Chapter 5. Preparation Methods of Disordered Semiconductor Films
504 $aIncludes bibliographical references and index.
520 3 $aDevices based on disordered semiconductors have wide applications. It is difficult to imagine modern life without printers and copiers, LCD monitors and TVs, optical disks, economical solar cells, and many other devices based on disordered semiconductors. However, nowadays books that discuss disordered (amorphous, nanocrystalline, microcrystalline) semiconductors focus, as a rule, on either physics of materials or physics of devices that are based on these materials. This book connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials. Compared with the first edition, this book takes into account the latest developments of disordered semiconductors and devices. It has new sections on the structures of carbon-based amorphous and nanocomposite films and atomic and electronic structures of organic semiconductors.
588 0 $aOnline resource; title from digital title page (viewed on October 23, 2019).
650 0 $aAmorphous semiconductors.
650 6 $aSemi-conducteurs amorphes.
650 7 $aSCIENCE$xPhysics$xElectricity.$2bisacsh
650 7 $aSCIENCE$xPhysics$xElectromagnetism.$2bisacsh
650 7 $aAmorphous semiconductors.$2fast$0(OCoLC)fst00807849
655 4 $aElectronic books.
776 08 $iPrint version:$aPopov, Anatoly.$tDisordered Semiconductors Second Edition : Physics and Applications.$dMilton : Pan Stanford Publishing, ©2018$z9789814774376
856 40 $uhttp://www.columbia.edu/cgi-bin/cul/resolve?clio15133544$zTaylor & Francis eBooks
852 8 $blweb$hEBOOKS