| Record ID | marc_loc_2016/BooksAll.2016.part13.utf8:138731719:928 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part13.utf8:138731719:928?format=raw |
LEADER: 00928cam a2200229 a 4500
001 81144401
003 DLC
005 20150214074916.0
008 850813s1980 ru a b 000 0 ruso
010 $a 81144401
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.85$b.V655 1980
245 00 $aVoprosy radiat︠s︡ionnoĭ tekhnologii poluprovodnikov /$c[V.V. Bolotov ... et al.] ; pod redakt︠s︡ieĭ L.S. Smirnova.
260 $aNovosibirsk :$bIzd-vo "Nauka," Sibirskoe otd-nie,$c1980.
300 $a291 p. :$bill. ;$c22 cm.
500 $aAt head of title: Akademii︠a︡ nauk SSSR. Sibirskoe otdelenie. Institut fiziki poluprovodnikov.
504 $aIncludes bibliographies.
650 0 $aSemiconductor doping.
650 0 $aSemiconductors$xEffect of radiation on.
700 1 $aBolotov, V. V.
700 1 $aSmirnov, L. S.$q(Leonid Stepanovich),$dactive 1979.
710 2 $aInstitut fiziki poluprovodnikov (Akademii︠a︡ nauk SSSR)