| Record ID | marc_loc_2016/BooksAll.2016.part13.utf8:88022041:905 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part13.utf8:88022041:905?format=raw |
LEADER: 00905pam a2200253 a 4500
001 81007607
003 DLC
005 20030910210031.0
008 810505s1982 nyua b 001 0 eng
010 $a 81007607
020 $a0471085006
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.99.M44$bN52 1982
082 00 $a621.3815/2$219
100 1 $aNicollian, E. H.
245 10 $aMOS (metal oxide semiconductor) physics and technology /$cE.H. Nicollian, J.R. Brews.
260 $aNew York :$bWiley,$cc1982.
300 $axv, 906 p. :$bill. ;$c25 cm.
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references and indexes.
650 0 $aMetal oxide semiconductors.
700 1 $aBrews, J. R.
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/description/wiley033/81007607.html
856 4 $3Table of Contents$uhttp://www.loc.gov/catdir/toc/onix04/81007607.html