Record ID | marc_loc_2016/BooksAll.2016.part14.utf8:175729947:777 |
Source | Library of Congress |
Download Link | /show-records/marc_loc_2016/BooksAll.2016.part14.utf8:175729947:777?format=raw |
LEADER: 00777pam a2200229 a 4500
001 83010392
003 DLC
005 19831123000000.0
008 830526s1983 nyua b 00110 eng
010 $a 83010392
020 $a0471092088 :$c$55.00 (est.)
050 0 $aTK7871.96.B55$bW37 1983
082 0 $a621.3815/28$219
100 10 $aWarner, R. M.
245 10 $aTransistors :$bfundamentals for the integrated-circuit engineer /$cR.M. Warner, Jr., B.L. Grung.
260 0 $aNew York :$bWiley,$cc1983.
300 $axix, 875 p. :$bill. ;$c24 cm.
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references and indexes.
650 0 $aBipolar transistors.
650 0 $aMetal oxide semiconductor field-effect transistors.
700 10 $aGrung, B. L.