| Record ID | marc_loc_2016/BooksAll.2016.part14.utf8:7081101:1400 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part14.utf8:7081101:1400?format=raw |
LEADER: 01400nam a2200325 a 4500
001 81600162
003 DLC
005 19990716000000.0
008 830324s1982 dcua b f000 0 eng c
010 $a 81600162
040 $aDGPO/DLC$cDLC$dDLC
050 00 $aQC100$b.U57 no. 400-71$aTK7871.89.S35
086 0 $aC 13.10:400-71
100 1 $aWilson, Robert G.
245 10 $aDifferential capacitance-voltage profiling of schottky barrier diodes for measuring implanted depth distributions in silicon /$cR.G. Wilson and D.M. Jamba.
260 $aWashington, D.C. :$bU.S. Dept. of Commerce, National Bureau of Standards ;$a[Springfield, VA :$bNational Technical Information Service, distributor,$c1982]
300 $av, 52 p. :$bill. ;$c26 cm.
440 0 $aNBS special publication ;$v400-71
440 0 $aSemiconductor measurement technology
500 $a"This work was sponsored by Defense Advanced Research Projects Agency."
500 $a"Hughes Research Laboratories."
500 $a"Issued February 1982."
504 $aIncludes bibliographical references.
500 $aItem 247 (microfiche)
650 0 $aSemiconductors$xTesting.
650 0 $aDiodes, Schottky=barrier.
700 1 $aJamba, Douglas M.
710 1 $aUnited States.$bNational Bureau of Standards.
710 1 $aUnited States.$bAdvanced Research Projects Agency.
710 2 $aHughes Aircraft Company.$bResearch Laboratories.