| Record ID | marc_loc_2016/BooksAll.2016.part15.utf8:119736201:1125 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part15.utf8:119736201:1125?format=raw |
LEADER: 01125cam a2200301 a 4500
001 84005420
003 DLC
005 20111222091218.0
008 840326s1984 gw a b 001 0 eng
010 $a 84005420
020 $a0387129952 (U.S.)
040 $aDLC$cDLC$dDLC
041 1 $aengrus
050 00 $aQC611.8.D66$bS5513 1984
082 00 $a537.6/22$219
100 1 $aShklovskiĭ, B. I.$q(Boris Isaakovich),$d1944-
240 10 $aĖlektronnye svoĭstva legirovannykh poluprovodnikov.$lEnglish
245 10 $aElectronic properties of doped semiconductors /$cB.I. Shklovskii, A.L. Efros.
260 $aBerlin ;$aNew York :$bSpringer-Verlag,$c1984.
300 $axii, 388 p. :$bill. ;$c23 cm.
440 0 $aSpringer series in solid-state sciences ;$v45
500 $aTranslation of: Ėlektronnye svoĭstva legirovannykh poluprovodnikov.
504 $aIncludes bibliographical references and index.
650 0 $aDoped semiconductors.
650 0 $aElectron-electron interactions.
650 0 $aHopping conduction.
650 0 $aMaterials at low temperatures.
700 1 $aĖfros, A. L.$q(Alekseĭ Lʹvovich),$d1938-