| Record ID | marc_loc_2016/BooksAll.2016.part19.utf8:109654975:792 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part19.utf8:109654975:792?format=raw |
LEADER: 00792pam a2200217 a 4500
001 89030851
003 DLC
005 19890726065744.4
008 890203s1989 enka b 00110 eng
010 $a 89030851
020 $a0471923621 (Wiley)
050 0 $aTK7871.95$b.H45 1989
082 0 $a621.3815/28$219
100 10 $aHeime, Klaus.
245 10 $aInGaAs field-effect transistors /$cKlaus Heime.
260 0 $aTaunton, Somerset, England :$bResearch Studies Press ;$aNew York :$bWiley,$cc1989.
300 $axiv, 218 p. :$bill. ;$c24 cm.
440 0 $aElectronic & electrical engineering research studies.$pIII-V compound technology series ;$v1
504 $aIncludes bibliographies and index.
650 0 $aMetal semiconductor field-effect transistors.
650 0 $aGallium arsenide semiconductors.