| Record ID | marc_loc_2016/BooksAll.2016.part20.utf8:149539146:963 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part20.utf8:149539146:963?format=raw |
LEADER: 00963cam a2200277 a 4500
001 90199052
003 DLC
005 20111231083826.0
008 900927s1988 ru a b 000 0 ruso
010 $a 90199052
020 $a5288000557
040 $aDLC$cDLC$dDLC
050 00 $aQC611.8.S5$bB37 1988
100 1 $aBaraban, A. P.$q(Aleksandr Petrovich)
245 10 $aĖlektronika sloev SiO₂ na kremnii /$cA.P. Baraban, V.V. Bulavinov, P.P. Konorov.
260 $aLeningrad :$bIzd-vo Leningradskogo universiteta,$c1988.
300 $a302 p. :$bill. ;$c23 cm.
500 $aAt head of title: Leningradskiĭ gosudarstvennyĭ universitet.
504 $aIncludes bibliographical references (p. 275-[301]).
650 0 $aSemiconductors$xSurfaces.
650 0 $aSilicon crystals.
650 0 $aSilicon oxide films.
650 0 $aCrystal growth.
650 0 $aDielectrics$xSurfaces.
700 1 $aBulavinov, V. V.$q(Vladimir Vladimirovich)
700 1 $aKonorov, P. P.