| Record ID | marc_loc_2016/BooksAll.2016.part20.utf8:54453742:1099 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part20.utf8:54453742:1099?format=raw |
LEADER: 01099pam a2200277 a 4500
001 90034858
003 DLC
005 20030910193828.0
008 900315s1990 nyua b 001 0 eng
010 $a 90034858
020 $a0471623075
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.85$b.H52 1990
082 00 $a621.381/52$220
245 00 $aHigh-speed semiconductor devices /$cedited by S.M. Sze.
260 $aNew York :$bWiley,$cc1990.
300 $axii, 643 p. :$bill. ;$c24 cm.
500 $aBased on notes for lectures and talks given at the 1988 International Electron Devices and Materials Symposium, held at the National Sun Yat-sen University, Kaohsiung, Taiwan, R.O.C.
500 $a"A Wiley-Interscience publication."
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductors.
650 0 $aDiodes, Semiconductor.
650 0 $aTransistors.
700 1 $aSze, S. M.,$d1936-
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/description/wiley032/90034858.html
856 4 $3Table of Contents$uhttp://www.loc.gov/catdir/toc/onix02/90034858.html