| Record ID | marc_loc_2016/BooksAll.2016.part23.utf8:217346592:972 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part23.utf8:217346592:972?format=raw |
LEADER: 00972nam a2200289 a 4500
001 94172690
003 DLC
005 19941031082848.4
008 940124s1993 enka b 001 0 eng d
010 $a 94172690
015 $aGB93-62550
020 $a0852968655
035 $a(OCoLC)29674706
040 $aMiU$cMiU$dUk$dIU$dOCU$dDLC
042 $alccopycat
050 04 $aQC611.8.G3$bP76 1993
082 00 $a537.6/223$220
245 00 $aProperties of lattice-matched and strained indium gallium arsenide /$cedited by Pallab Bhattacharya.
260 $aLondon :$bINSPEC, Institution of Electrical Engineers,$cc1993.
300 $axxi, 317 p. :$bill. ;$c29 cm.
440 0 $aEMIS datareviews series ;$vno. 8
504 $aIncludes bibliographical references and index.
650 0 $aGallium arsenide semiconductors.
650 0 $aIndium alloys.
653 0 $aSemiconductors$aElectronic properties
700 10 $aBhattacharya, Pallab.
710 2 $aINSPEC (Information service)