| Record ID | marc_loc_2016/BooksAll.2016.part24.utf8:129272931:814 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part24.utf8:129272931:814?format=raw |
LEADER: 00814cam a2200241 a 4500
001 95051185
003 DLC
005 20141203105202.0
008 951201s1994 gaua b 001 0 eng
010 $a 95051185
020 $a1884932509 (hardback)
035 $a10828361 (hardback)
040 $aDLC$cDLC$dDLC
050 00 $aTK7871.15.G3$bP46 1994
082 00 $a621.381/32$220
100 1 $aPengelly, Raymond S.$q(Raymond Sydney),$d1948-
245 10 $aMicrowave field-effect transistors :$btheory, design, and applications /$cby Raymond S. Pengelly.
250 $a3rd ed.
260 $aAtlanta :$bNoble,$c1994.
300 $axvi, 687 p. :$bill. ;$c24 cm.
504 $aIncludes bibliographical references and index.
650 0 $aGallium arsenide semiconductors.
650 0 $aMetal semiconductor field-effect transistors.