| Record ID | marc_loc_2016/BooksAll.2016.part29.utf8:235116699:809 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part29.utf8:235116699:809?format=raw |
LEADER: 00809cam a22002414a 4500
001 2002279812
003 DLC
005 20021104125445.0
008 020514s2002 njua b 000 0 eng
010 $a 2002279812
020 $a9810248423
040 $aDLC$cDLC$dDLC
042 $apcc
050 00 $aTK7871.99.M44$bO95 2002
082 00 $a621.39/732$221
245 00 $aOxide reliability :$ba summary of silicon oxide wearout, breakdown, and reliability /$ceditor, D.J. Dumin.
260 $a[River Edge, NJ] :$bWorld Scientific,$cc2002.
300 $aix, 270 p. :$bill. ;$c26 cm.
440 0 $aSelected topics in electronics and systems ;$vv. 23
504 $aIncludes bibliographical references.
650 0 $aMetal oxide semiconductors$xReliability.
650 0 $aSilicon oxide$xDeterioration.
700 1 $aDumin, D. J.