| Record ID | marc_loc_2016/BooksAll.2016.part36.utf8:88903586:1144 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part36.utf8:88903586:1144?format=raw |
LEADER: 01144cam a22003377a 4500
001 2008936490
003 DLC
005 20100328084856.0
008 080902s2009 enka b 001 0 eng
010 $a 2008936490
015 $aGBA8B2636$2bnb
015 $a99012178X$2dnb
016 7 $a014761075$2Uk
020 $a9781848820586 (hbk.)
020 $a1848820585 (hbk.)
020 $a1848820593 (ebk.)
020 $a9781848820593 (ebk.)
035 $a(OCoLC)ocn258100603
040 $aUKM$cUKM$dYDXCP$dBWKUK$dBWK$dBWX$dBTCTA$dGBVCP$dDLC
042 $aukblcatcopy$alccopycat
050 00 $aQC611.6.D4$bS43 2009
082 04 $a621.38152$222
100 1 $aSeebauer, Edmund G.$q(Edmund Gerard)
245 10 $aCharged semiconductor defects :$bstructure, thermodynamics and diffusion /$cEdmund G. Seebauer, Meredith C. Kratzer.
260 $aLondon :$bSpringer,$cc2009.
300 $axiv, 294 p. :$bill. ;$c24 cm.
490 1 $aEngineering materials and processes
504 $aIncludes bibliographical references and index.
650 0 $aSemiconductors$xDefects.
700 1 $aKratzer, Meredith C.
830 0 $aEngineering materials and processes.