| Record ID | marc_loc_2016/BooksAll.2016.part38.utf8:231492756:1157 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part38.utf8:231492756:1157?format=raw |
LEADER: 01157cam a22003017a 4500
001 2011278484
003 DLC
005 20130109084719.0
008 120628s2011 si a b 001 0 eng d
010 $a 2011278484
015 $aGBB1A3553$2bnb
016 7 $a015880451$2Uk
020 $a9789812568632 (hbk.)
020 $a9812568638 (hbk.)
035 $a(OCoLC)ocn751837042
040 $aUKMGB$beng$cUKMGB$dSINTU$dCDX$dYDXCP$dE7B$dOCLCQ$dCUY$dBTCTA$dBAKER$dBWX$dDLC
042 $alccopycat
050 00 $aTK7871.95$b.L58 2011
082 04 $a621.3815284015118$223
100 1 $aLiu, Weidong,$d1965-
245 10 $aBSIM4 and MOSFET modeling for IC simulation /$cWeidong Liu, Chenming Hu.
260 $aSingapore ;$aHackensack, NJ :$bWorld Scientific,$c2011.
300 $axix, 414 p. :$bill. ;$c24 cm.
490 1 $aASSET, International series on advances in solid state electronics and technology
504 $aIncludes bibliographical references and index.
650 0 $aMetal oxide semiconductor field-effect transistors$xMathematical models.
700 1 $aHu, Chenming.
830 0 $aInternational series on advances in solid state electronics and technology.