| Record ID | marc_loc_2016/BooksAll.2016.part40.utf8:165641542:1505 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_2016/BooksAll.2016.part40.utf8:165641542:1505?format=raw |
LEADER: 01505cam a22003857a 4500
001 2012554448
003 DLC
005 20150627075901.0
008 130607s2012 nyua b 001 0 eng d
010 $a 2012554448
015 $aGBB346725$2bnb
016 7 $a016382486$2Uk
020 $a9780199325993 (pbk.)
020 $a0199325995 (pbk.)
035 $a(OCoLC)ocn843802989
040 $aUKMGB$beng$cUKMGB$dOCLCO$dCNCEN$dBTCTA$dYDXCP$dCDX$dOCLCF$dNLE$dDLC
042 $alccopycat
050 00 $aTK7871.99.M44$bT768 2012
082 00 $a621.3815/28$223
100 1 $aTsividis, Yannis,$eauthor.
245 14 $aThe MOS transistor /$cYannis Tsividis, Colin McAndrew.
250 $aInternational 3rd ed., Special MOOC ed.
260 $aNew York :$bOxford University Press,$cc2012.
300 $axxiv, 711 p. :$bill. ;$c24 cm.
500 $aPrevious edition: 2012.
500 $aOriginally published: 1999.
504 $aIncludes bibliographical references and index.
650 0 $aMetal oxide semiconductors$vTextbooks.
650 0 $aMetal oxide semiconductors$xMathematical models$vTextbooks.
650 0 $aMetal oxide semiconductor field-effect transistors$vTextbooks.
650 7 $aMetal oxide semiconductor field-effect transistors.$2fast$0(OCoLC)fst01017614
650 7 $aMetal oxide semiconductors.$2fast$0(OCoLC)fst01017624
650 7 $aMetal oxide semiconductors$xMathematical models.$2fast$0(OCoLC)fst01017630
655 7 $aTextbooks.$2fast$0(OCoLC)fst01423863
700 1 $aMcAndrew, Colin.