| Record ID | marc_loc_updates/v35.i17.records.utf8:12555183:1146 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_updates/v35.i17.records.utf8:12555183:1146?format=raw |
LEADER: 01146cam a22003017a 4500
001 2007272569
003 DLC
005 20070418133503.0
008 070313s2006 njua b 001 0 eng d
010 $a 2007272569
040 $aSINTU$cSINTU$dBAKER$dMUU$dYDXCP$dDLC
020 $a9812568352 (v. 1)
035 $a(OCoLC)ocm71298024
035 $a(OCoLC)71298024
042 $alccopycat
050 00 $aTK7871.15.S56$bS528 2006
082 00 $a621.3815/2$222
245 00 $aSiC materials and devices /$cedited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein.
260 $aNew Jersey ;$aLondon :$bWorld Scientific,$c2006-
300 $av. <1> :$bill. ;$c26 cm.
440 0 $aSelected topics in electronics and systems ;$vv. 40
500 $aMaterial reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.
650 0 $aSilicon carbide$xElectric properties.
650 0 $aSemiconductors.
700 1 $aShur, Michael.
700 1 $aRumyantsev, Sergey L.
700 1 $aLevinshteĭn, M. E.$q(Mikhail Efimovich)
730 02 $aJournal of high speed electronics & systems.