| Record ID | marc_loc_updates/v37.i35.records.utf8:18721770:1438 |
| Source | Library of Congress |
| Download Link | /show-records/marc_loc_updates/v37.i35.records.utf8:18721770:1438?format=raw |
LEADER: 01438cam a2200325 a 4500
001 2007030343
003 DLC
005 20090827105015.0
008 070724s2008 flua b 001 0 eng
010 $a 2007030343
020 $a9781420066852 (alk. paper)
020 $a1420066854 (alk. paper)
035 $a(OCoLC)ocn159822251
035 $a(OCoLC)159822251$z(OCoLC)156812711
040 $aDLC$cDLC$dBAKER$dBTCTA$dC#P$dDLC
050 00 $aTK7871.96.B55$bS53 2008
082 00 $a621.3815/28$222
245 00 $aSiGe and Si strained-layer epitaxy for silicon heterostructure devices /$cedited by John D. Cressler.
260 $aBoca Raton :$bCRC Press/Taylor & Francis,$cc2008.
300 $a1 v. (various pagings) :$bill. ;$c26 cm.
504 $aIncludes bibliographical references and index.
500 $a"The material was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor and Francis, 2005"--T.p. verso.
650 0 $aBipolar transistors$xMaterials.
650 0 $aHeterostructures.
650 0 $aSilicon$xElectric properties.
650 0 $aEpitaxy.
700 1 $aCressler, John D.
730 0 $aSilicon heterostructure handbook.
856 41 $3Table of contents only$uhttp://www.loc.gov/catdir/toc/ecip0723/2007030343.html
856 42 $3Publisher description$uhttp://www.loc.gov/catdir/enhancements/fy0811/2007030343-d.html